Power Transistors

January 31, 2005 10:31 am | Product Releases | Comments

M/A-COM announces an extension of their bipolar power transistors and power module families, designed for avionics and pulsed radar products and applications. The PH1090-700B bipolar power transistor is a NPN common base Class C pulse power transistor designed for IFF and other avionics applications in the frequency band of 1030 to 1090 MHz....

LISTED UNDER: Semiconductors, Transistors

Scaling InP Transistors for RF and Mixed Signal Applications

August 12, 2004 10:54 am | Product Releases | Comments

Indium Phosphide is maturing as a mainstream technology for both electronic and optical functions. By Minh Le Indium Phosphide has compelling properties that make it a useful material for both electronic and optical functions. It is a direct bandgap semiconductor whose energy gap allows the generation and detection of light at 1....

LISTED UNDER: Semiconductors, Transistors

Packaging for SiGe Transistors

August 3, 2004 5:24 am | Product Releases | Comments

NEC introduces a flat lead package developed specifically for use with its high breakdown voltage SiGe transistors. The M16 package measures 1.2 × 1.0 × 0.5 mm (including leads). Available in the M16 package are the NESG2021, NESG2031, and NESG2101. These transistors are suited for use in LNAs, gain blocks, and oscillators in a variety of applications from 800 MHz to 6 GHz where small size and low profile are critical....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

LDMOS Transistors

September 2, 2003 8:28 am | Product Releases | Comments

The LB501 is Polyfet's high power LDMOS single die LDMOS FET. The output power is rated at 175 watts @ 500 MHz with a minimum gain of 13 dB. It is targeted for operation in the 1 MHz to 600 MHz range. S-Parameters, Spice Models and Zin / Zout data is available. A 30 MHz to 512 MHz design example of this FETs capability is the TB167A demonstration amplifier....

LISTED UNDER: Semiconductors, Transistors

RF Transistors

July 30, 2003 9:51 am | Product Releases | Comments

Motorola introduces 100 W, 900 MHz RF power transistors in plastic packaging. The MRF5S9100M is designed for CDMA applications and demonstrates typical performances of 17 dB gain, 23 W average output power and 30% efficiency at – 45 dBc adjacent channel power). The MRF5S910M is a 100 W, 900 MHz plastic RF power transistor that is optimized for GSM and GSM EDGE applications....

LISTED UNDER: Semiconductors, Transistors

Field Effect Transistors

July 2, 2003 9:47 am | Product Releases | Comments

Toshiba announces a 90-watt C-Band GaAs field effect transistor (FET). The TIM5964-90SL features output power of 49.5 dBm (typical) at a frequency range of 5.9 to 6.4 GHz. Gain (G1dB) is 7 dB typical. Drain current (IDS) is 18.0 A typical. IM3 is – 40 dBc typical at 43.5 dBm S.C.L. (949) 455-2000; www....

LISTED UNDER: Semiconductors, Transistors


May 30, 2003 11:38 am | Product Releases | Comments

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 μm × 1500 μm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels....

LISTED UNDER: Semiconductors, Transistors

RF Power Transistors

April 29, 2003 7:27 am | Product Releases | Comments

Motorola introduces its sixth generation of RF power transistors for GSM, EDGE, CDMA, and WCDMA base station amplifiers. These RF LDMOS devices help develop low cost, efficient cellular base stations for voice, data, and video transmissions. At 2.2 GHz, typical performance for a 90 watt (P1dB) device is: WCDMA output power is 17 watts; large signal gain is 17 dB; efficiency is 28....

LISTED UNDER: Semiconductors, Transistors

SiGe Transistors

September 27, 2002 6:07 am | Product Releases | Comments

The NESG2021 and NESG2031 are ideal for use as LNA devices in WLAN and short-range wireless applications. They are housed in a miniature, low profile, flat lead M05 packaged. The NESG2021 features a noise figure of 0.9 dB at 2 GHz and 1.3 dB at 5.2 GHz; associated gain is 18 dB at 2 GHz and 11 dB at 5....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

Twin NPN Transistors

May 6, 2002 7:16 am | Product Releases | Comments

California Eastern Laboratories (CEL) announced the availability of NEC's UPA twin transistors in a new, smaller package. With an outline of 1.2 × 0.8 mm and a height of 0.50 mm, the new 6 pin TD package is ideal for size-constrained applications like VCO modules for cellular and cordless phones, Special Mobile Radios, pagers, PCMCIA cards, keyless entry transmitters, and other portable wireless products....

LISTED UNDER: Semiconductors, Transistors

GaAs Transistors for Base Station Receiver Designs

April 4, 2002 8:30 am | Product Releases | Comments

Agilent Technologies announced two additional GaAs transistors available in the company's MiniPak miniature leadless package. These GaAs transistors are targeted at PC card and base station receiver designs. The Agilent MiniPak measures 1.4 mm × 1.2 mm × 0.7 mm. The 400-micron ATF-551M4 is a single voltage E-pHEMT GaAs FET that does not need a negative gate bias voltage for operation....

LISTED UNDER: Semiconductors, Transistors

Medium Power Transistors

October 30, 2001 9:17 am | Product Releases | Comments

California Eastern Laboratories (CEL) introduces three NPN high frequency, medium power silicon transistors from NEC. Fabricated using NEC's high frequency wafer process, the NE644M04, NE678M04 and NE677M04 are usable in applications from 100 MHz to 3 GHz. Designed to serve as driver amplifiers or as power amplifier stages, these low cost parts are ideal for cellular and cordless phones, pagers, two-way radios and in fixed wireless transcei...

LISTED UNDER: Semiconductors, Transistors

SiGe Heterojunction Bipolar Transistors

October 30, 2001 8:03 am | Product Releases | Comments

Toshiba introduced a family of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba's line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, currently offering low noise levels, and a high-power gain transistor, designated the MT4S101U....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

RF LDMOS High Power Transistors

April 10, 2001 10:21 am | Product Releases | Comments

Motorola, Inc. introduces a new family of RF power plastic LDMOS devices optimized for 1.0 GHz base station applications. Fully characterized and individually tuned to operate at frequencies to 1.0 GHz, this family of RF LDMOS devices is housed in the TO-270 RF power plastic package. The TO-270 is a JEDEC registered, two-lead RF power plastic package....

LISTED UNDER: Semiconductors, Transistors

90 Watt LDMOS RF Power Transistors for UMTS

April 6, 2001 5:20 am | Product Releases | Comments

UltraRF, Inc., a leader in manufacturing high-power, high-performance laterally diffused metal oxide silicon (LDMOS) RF power semiconductors for the wireless industry, announces its UPF21090 discrete RF power transistor. The UPF21090 UltraGOLDII™ LDMOS product is specifically designed for UMTS base station applications in the 2....

LISTED UNDER: Semiconductors, Transistors


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