SiGe Heterojunction Bipolar Transistors

October 30, 2001 8:03 am | Product Releases | Comments

Toshiba introduced a family of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba's line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, currently offering low noise levels, and a high-power gain transistor, designated the MT4S101U....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

RF LDMOS High Power Transistors

April 10, 2001 10:21 am | Product Releases | Comments

Motorola, Inc. introduces a new family of RF power plastic LDMOS devices optimized for 1.0 GHz base station applications. Fully characterized and individually tuned to operate at frequencies to 1.0 GHz, this family of RF LDMOS devices is housed in the TO-270 RF power plastic package. The TO-270 is a JEDEC registered, two-lead RF power plastic package....

LISTED UNDER: Semiconductors, Transistors

90 Watt LDMOS RF Power Transistors for UMTS

April 6, 2001 5:20 am | Product Releases | Comments

UltraRF, Inc., a leader in manufacturing high-power, high-performance laterally diffused metal oxide silicon (LDMOS) RF power semiconductors for the wireless industry, announces its UPF21090 discrete RF power transistor. The UPF21090 UltraGOLDII™ LDMOS product is specifically designed for UMTS base station applications in the 2....

LISTED UNDER: Semiconductors, Transistors

LDMOS RF Power Transistors

February 13, 2001 9:49 am | Product Releases | Comments

UltraRF unveiled its UPF18060 discrete RF power transistor that is designed with the company's UltraGOLDII LDMOS technology for reliable performance. It serves as a drop-in replacement for Motorola MRF18060. The UPF18060 ranks as the first UltraGOLDII LDMOS product in the company's new family of drop-in replacements with a frequency band of 1....

LISTED UNDER: Semiconductors, Transistors


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