Richardson Electronics Will Distribute Avago Technologies’ RFICs, Transistors and Diodes

February 27, 2007 7:34 am | Product Releases | Comments

Richardson Electronics announces a North American Distribution Partnership with Avago Technologies, of San Jose, California, to distribute its complete line of RFIC, Transistor, Schottky and PIN Diode, and millimeter wave (mmW) products. Avago's extensive line of RF semiconductors provides solutions for numerous markets including Cellular base station, WLAN, WiMAX, GPS, ISM, RFID, and mmW including Radio Links, VSAT and Military....

LISTED UNDER: Semiconductors, Diodes | Semiconductors, Transistors

Mid-voltage Bipolar Transistors

October 19, 2006 8:40 am | Product Releases | Comments

Zetex Semiconductors introduces a range of mid-voltage bipolar transistors in the SOT23 package, capable of handling a power dissipation of up to 1.25 W. With the 3 × 2.5 mm footprint, these seven NPN and six PNP devices help to increase circuit power density by replacing the much larger DPAK, SOT89 and SOT223 packaged parts....

LISTED UNDER: Semiconductors, Transistors

Plastic Packaging for High-power RF Transistors

August 11, 2006 10:53 am | Product Releases | Comments

Freescale Semiconductor introduces 2 GHz high-power RF transistors housed in over-molded plastic packages that deliver performance comparable to air-cavity flange packages. The transistors are based on the company’s high-voltage, seventh-generation (HV7) RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology....

LISTED UNDER: Semiconductors, Transistors

Bipolar Transistors

July 10, 2006 9:59 am | Product Releases | Comments

A range of low voltage bipolar transistors from Zetex Semiconductors extends the power handling capability of the SOT23 package, enabling designers to shrink products by replacing SOT89 and SOT223 equivalent parts. Zetex is offering two NPN and two PNP devices, each capable of dissipating up to 1....

LISTED UNDER: Semiconductors, Transistors

Silicon Transistors

August 3, 2005 6:38 am | Product Releases | Comments

CEL announces that NEC has released a low profile M33 that measures 0.64 mm × 0.84 mm × 0.4 mm (including leads) and houses a series of NEC Silicon and Silicon Germanium devices developed specifically for VCO module applications. Available are the NE685M33 and NE851M33 Silicon Bipolars and the NESG2107M33 Silicon Germanium transistor....

LISTED UNDER: Semiconductors, Transistors

pHEMT Transistors

August 3, 2005 6:33 am | Product Releases | Comments

TriQuint Semiconductor announces ten discrete Power pHEMT transistor devices for a variety of amplifier applications including aerospace, digital radio or wireless basestations. These devices, utilizing the company’s 0.35µ power pHEMT production process, offer impressive power, gain and efficiency performance and are suited for L- through Ku-band high power amplifiers....

LISTED UNDER: Semiconductors, Transistors

Power Transistors

January 31, 2005 10:31 am | Product Releases | Comments

M/A-COM announces an extension of their bipolar power transistors and power module families, designed for avionics and pulsed radar products and applications. The PH1090-700B bipolar power transistor is a NPN common base Class C pulse power transistor designed for IFF and other avionics applications in the frequency band of 1030 to 1090 MHz....

LISTED UNDER: Semiconductors, Transistors

Scaling InP Transistors for RF and Mixed Signal Applications

August 12, 2004 10:54 am | Product Releases | Comments

Indium Phosphide is maturing as a mainstream technology for both electronic and optical functions. By Minh Le Indium Phosphide has compelling properties that make it a useful material for both electronic and optical functions. It is a direct bandgap semiconductor whose energy gap allows the generation and detection of light at 1....

LISTED UNDER: Semiconductors, Transistors

Packaging for SiGe Transistors

August 3, 2004 5:24 am | Product Releases | Comments

NEC introduces a flat lead package developed specifically for use with its high breakdown voltage SiGe transistors. The M16 package measures 1.2 × 1.0 × 0.5 mm (including leads). Available in the M16 package are the NESG2021, NESG2031, and NESG2101. These transistors are suited for use in LNAs, gain blocks, and oscillators in a variety of applications from 800 MHz to 6 GHz where small size and low profile are critical....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

LDMOS Transistors

September 2, 2003 8:28 am | Product Releases | Comments

The LB501 is Polyfet's high power LDMOS single die LDMOS FET. The output power is rated at 175 watts @ 500 MHz with a minimum gain of 13 dB. It is targeted for operation in the 1 MHz to 600 MHz range. S-Parameters, Spice Models and Zin / Zout data is available. A 30 MHz to 512 MHz design example of this FETs capability is the TB167A demonstration amplifier....

LISTED UNDER: Semiconductors, Transistors

RF Transistors

July 30, 2003 9:51 am | Product Releases | Comments

Motorola introduces 100 W, 900 MHz RF power transistors in plastic packaging. The MRF5S9100M is designed for CDMA applications and demonstrates typical performances of 17 dB gain, 23 W average output power and 30% efficiency at – 45 dBc adjacent channel power). The MRF5S910M is a 100 W, 900 MHz plastic RF power transistor that is optimized for GSM and GSM EDGE applications....

LISTED UNDER: Semiconductors, Transistors

Field Effect Transistors

July 2, 2003 9:47 am | Product Releases | Comments

Toshiba announces a 90-watt C-Band GaAs field effect transistor (FET). The TIM5964-90SL features output power of 49.5 dBm (typical) at a frequency range of 5.9 to 6.4 GHz. Gain (G1dB) is 7 dB typical. Drain current (IDS) is 18.0 A typical. IM3 is – 40 dBc typical at 43.5 dBm S.C.L. (949) 455-2000; www....

LISTED UNDER: Semiconductors, Transistors


May 30, 2003 11:38 am | Product Releases | Comments

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 μm × 1500 μm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels....

LISTED UNDER: Semiconductors, Transistors

RF Power Transistors

April 29, 2003 7:27 am | Product Releases | Comments

Motorola introduces its sixth generation of RF power transistors for GSM, EDGE, CDMA, and WCDMA base station amplifiers. These RF LDMOS devices help develop low cost, efficient cellular base stations for voice, data, and video transmissions. At 2.2 GHz, typical performance for a 90 watt (P1dB) device is: WCDMA output power is 17 watts; large signal gain is 17 dB; efficiency is 28....

LISTED UNDER: Semiconductors, Transistors

SiGe Transistors

September 27, 2002 6:07 am | Product Releases | Comments

The NESG2021 and NESG2031 are ideal for use as LNA devices in WLAN and short-range wireless applications. They are housed in a miniature, low profile, flat lead M05 packaged. The NESG2021 features a noise figure of 0.9 dB at 2 GHz and 1.3 dB at 5.2 GHz; associated gain is 18 dB at 2 GHz and 11 dB at 5....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors


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