Cypress’s New $25 PSoC 4 Pioneer Kit

April 10, 2013 11:09 am | by WDD Staff | Product Releases | Comments

Cypress Semiconductor Corp. [NASDAQ: CY] and Premier Farnell (London), have announced that customers can pre-order Cypress’s new PSoC 4 Pioneer Kit. Combined with the free PSoC Creator Integrated Design Environment...

LISTED UNDER: Boards & Modules | Development Kits / Platforms | Semiconductors, Diodes

RFMW Introduces 180-Micron pHEMT FET from TriQuint Semiconductor

April 5, 2013 10:38 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2018, a discrete 180-Micron pHEMT, which operates from DC to 20 GHz. The TGF2018 features TriQuint's standard 0.25 um power pHEMT production process and 55% power-added efficiency @ 1 dB compression.

LISTED UNDER: Semiconductors, MMIC | Semiconductors, SoC | Semiconductors, Transistors

Transphorm's GaN Silicon Transistors & Diodes

March 20, 2013 11:08 am | by WDD Staff | Product Releases | Comments

Transphorm Inc. has announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing a JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, MMIC | Semiconductors, Transistors

Extensive Range of LDMOS Transistors from STMicroelectronics

June 18, 2012 6:32 am | Product Releases | Comments

Family of Plastic-Packaged RF Power Transistors Ideally Suited for Portable and Fixed Wireless Communications Applications. Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for an extensive range of laterally diffused metal oxide semiconductor (LDMOS) transistors from STMicroelectronics (ST).

LISTED UNDER: Semiconductors, Transistors

C-band Gallium Nitride High-Electron Mobility Transistors Address Satellite Earth Stations

December 1, 2011 7:24 am | Product Releases | Comments

Mitsubishi Electric Corporation announced it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4–8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a s ample basis beginning January 10, 2012.

LISTED UNDER: Semiconductors, Transistors

HEMT Transistors and MMIC Enhance S-Band Radar Applications

July 12, 2011 7:18 am | Product Releases | Comments

Cree released a family of packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) with what is presented as the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solutions.

LISTED UNDER: Semiconductors, MMIC | Semiconductors, Transistors | Radar

NXP Introduces New Plastic Packages for RF Power Transistors

June 16, 2011 10:45 am | Product Releases | Comments

NXP Semiconductors N.V. announced the launch of a complete line of overmolded plastic (OMP) RF power devices with peak powers ranging from 2.5 to 200 Watts. The new range of OMP devices will be introduced as a complement to NXP’s extensive range of products in ceramic packages, providing customers a choice for more cost-sensitive applications, while maintaining the required level of RF performance.

LISTED UNDER: Semiconductors, Transistors

LDMOS Power Transistors Deliver Higher Gain, Greater Efficiency in Mismatched Applications

November 16, 2010 6:00 am | Product Releases | Comments

Freescale Semiconductor recently unveiled three advanced industrial RF power transistors at an ideal price/performance ratio for original equipment manufacturers (OEMs). The enhanced rugged capability combined with leading-edge RF performance enables OEMs to realize significant cost savings at the system level for industrial and commercial aerospace designs....

LISTED UNDER: Semiconductors, Transistors

Online Design Exploration Environment Launched for Small-Signal RF Transistors

May 17, 2010 10:42 am | Product Releases | Comments

NIJMEGEN, THE NETHERLANDS; PORTLAND, OR; and EL SEGUNDO, CA –- AWR®, Transim Technology and NXP Semiconductors recently announced the launch of the NXP SimPort Design Center for online design exploration of NXP’s small-signal RF transistors. The SimPort Design Center provides a variety of online design solutions across NXP’s product portfolio and features an “interactive datasheet” for small-signal RF transistors....

LISTED UNDER: Semiconductors, Transistors

RF Power LDMOS Transistors Deliver Ease-of-Integration Features and High Efficiency

June 9, 2009 12:36 pm | Product Releases | Comments

Freescale Semiconductor has expanded on its commitment to GSM EDGE wireless networks with the introduction of three high-performance RF power transistors based on laterally-diffused metal oxide semiconductor (LDMOS) technology. The devices incorporate enhancements that make them easy to integrate into amplifiers while delivering exceptional levels of performance....

LISTED UNDER: Semiconductors, Transistors

Microwave Transistors Work in Telecom Applications

March 6, 2009 6:56 am | Product Releases | Comments

Cree, Inc. announces the sample release of 2 120 W GaN HEMT microwave transistors for telecommunication applications, such as W-CDMA, LTE and WiMAX. Due to the combination of high RF power density, low capacitance and high thermal conductivity silicon carbide (SiC) substrates, these transistors are said to provide ultimate performance compared to other technologies, such as GaAs MESFET or Si LDMOSFET....

LISTED UNDER: Semiconductors, Transistors

Power Transistors Operate in UHF Applications

February 25, 2009 10:46 am | Product Releases | Comments

HVVi Semiconductors, Inc. announces its Model HVV0405-175 power transistor, using the high voltage vertical field effect transistor architecture for radar applications in the UHF band. Operating across the 420 to 470 MHz band, the device offers UHF system designers a fully qualified 175 W RF power transistor with optimal gain and ruggedness specifications....

LISTED UNDER: Semiconductors, Transistors

Microwave Transistors Serve Telecom Applications

January 30, 2009 10:52 am | Product Releases | Comments

Cree's CGH21120F and CGH25120F GaN HEMT microwave transistors perform in telecommunication applications, such as W-CDMA, LTE and WiMAX. The components consist of single, input-pre-matched GaN HEMT devices providing >120 W of saturated power in industry-standard ceramic-metal packages. The CGH21120F is designed for frequencies from 1,800 to 2,300 MHz, while the CGH25120F is optimized for frequencies from 2,300 to 2,700 MHz....

LISTED UNDER: Semiconductors, Transistors

LDMOS RF Power Transistors Meet Commercial Aerospace Requirements

December 18, 2008 7:11 am | Product Releases | Comments

Freescale Semiconductor introduces its MRF6V4300N high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power transistor that is optimized for HF to UHF communications. This power transistor is suitable for a range of applications, including radar and air traffic management systems since it provides high gain and efficiency....

LISTED UNDER: Military-Aerospace | Semiconductors, Transistors

HV-HBT Transistors Provide RF Solution

September 8, 2008 6:45 am | Product Releases | Comments

TriQuint Semiconductor releases two HV-HBT (high voltage-heterojunction bipolar transistor) devices that are efficient and highly linear. When paired with proprietary high power HBT devices, they provide a complete RF solution for 3G/4G high power amplifier (HPA) mobile infrastructure designs. These relatively low power HBT devices are suitable as pre-drivers and drivers....

LISTED UNDER: Semiconductors, Transistors


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