NXP Introduces New Plastic Packages for RF Power Transistors

June 16, 2011 10:45 am | Product Releases | Comments

NXP Semiconductors N.V. announced the launch of a complete line of overmolded plastic (OMP) RF power devices with peak powers ranging from 2.5 to 200 Watts. The new range of OMP devices will be introduced as a complement to NXP’s extensive range of products in ceramic packages, providing customers a choice for more cost-sensitive applications, while maintaining the required level of RF performance.

LISTED UNDER: Semiconductors, Transistors

LDMOS Power Transistors Deliver Higher Gain, Greater Efficiency in Mismatched Applications

November 16, 2010 6:00 am | Product Releases | Comments

Freescale Semiconductor recently unveiled three advanced industrial RF power transistors at an ideal price/performance ratio for original equipment manufacturers (OEMs). The enhanced rugged capability combined with leading-edge RF performance enables OEMs to realize significant cost savings at the system level for industrial and commercial aerospace designs....

LISTED UNDER: Semiconductors, Transistors

Online Design Exploration Environment Launched for Small-Signal RF Transistors

May 17, 2010 10:42 am | Product Releases | Comments

NIJMEGEN, THE NETHERLANDS; PORTLAND, OR; and EL SEGUNDO, CA –- AWR®, Transim Technology and NXP Semiconductors recently announced the launch of the NXP SimPort Design Center for online design exploration of NXP’s small-signal RF transistors. The SimPort Design Center provides a variety of online design solutions across NXP’s product portfolio and features an “interactive datasheet” for small-signal RF transistors....

LISTED UNDER: Semiconductors, Transistors

RF Power LDMOS Transistors Deliver Ease-of-Integration Features and High Efficiency

June 9, 2009 12:36 pm | Product Releases | Comments

Freescale Semiconductor has expanded on its commitment to GSM EDGE wireless networks with the introduction of three high-performance RF power transistors based on laterally-diffused metal oxide semiconductor (LDMOS) technology. The devices incorporate enhancements that make them easy to integrate into amplifiers while delivering exceptional levels of performance....

LISTED UNDER: Semiconductors, Transistors

Microwave Transistors Work in Telecom Applications

March 6, 2009 6:56 am | Product Releases | Comments

Cree, Inc. announces the sample release of 2 120 W GaN HEMT microwave transistors for telecommunication applications, such as W-CDMA, LTE and WiMAX. Due to the combination of high RF power density, low capacitance and high thermal conductivity silicon carbide (SiC) substrates, these transistors are said to provide ultimate performance compared to other technologies, such as GaAs MESFET or Si LDMOSFET....

LISTED UNDER: Semiconductors, Transistors

Power Transistors Operate in UHF Applications

February 25, 2009 10:46 am | Product Releases | Comments

HVVi Semiconductors, Inc. announces its Model HVV0405-175 power transistor, using the high voltage vertical field effect transistor architecture for radar applications in the UHF band. Operating across the 420 to 470 MHz band, the device offers UHF system designers a fully qualified 175 W RF power transistor with optimal gain and ruggedness specifications....

LISTED UNDER: Semiconductors, Transistors

Microwave Transistors Serve Telecom Applications

January 30, 2009 10:52 am | Product Releases | Comments

Cree's CGH21120F and CGH25120F GaN HEMT microwave transistors perform in telecommunication applications, such as W-CDMA, LTE and WiMAX. The components consist of single, input-pre-matched GaN HEMT devices providing >120 W of saturated power in industry-standard ceramic-metal packages. The CGH21120F is designed for frequencies from 1,800 to 2,300 MHz, while the CGH25120F is optimized for frequencies from 2,300 to 2,700 MHz....

LISTED UNDER: Semiconductors, Transistors

LDMOS RF Power Transistors Meet Commercial Aerospace Requirements

December 18, 2008 7:11 am | Product Releases | Comments

Freescale Semiconductor introduces its MRF6V4300N high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power transistor that is optimized for HF to UHF communications. This power transistor is suitable for a range of applications, including radar and air traffic management systems since it provides high gain and efficiency....

LISTED UNDER: Military-Aerospace | Semiconductors, Transistors

HV-HBT Transistors Provide RF Solution

September 8, 2008 6:45 am | Product Releases | Comments

TriQuint Semiconductor releases two HV-HBT (high voltage-heterojunction bipolar transistor) devices that are efficient and highly linear. When paired with proprietary high power HBT devices, they provide a complete RF solution for 3G/4G high power amplifier (HPA) mobile infrastructure designs. These relatively low power HBT devices are suitable as pre-drivers and drivers....

LISTED UNDER: Semiconductors, Transistors

Transistors Target Avionic and Radar Apps

September 5, 2008 5:47 am | Product Releases | Comments

Tyco Electronics’ MAPRST0912-50, MAPRST0912-350 and MAPR-000912-500S00 bipolar transistors perform in pulsed avionics and radar applications including air traffic control (ATC) systems, distance measurement equipment (DME) and identification friend or foe (IFF) systems. The 50 W peak MAPRST0912-50 offers a minimum gain of 9 dB and 40% minimum collector efficiency on a 50 V DC supply in driver stages in pulse power amplifier applications....

LISTED UNDER: Semiconductors, Transistors | Radar

RF Power Transistors Function in Wireless Base Stations

April 11, 2008 9:47 am | Product Releases | Comments

TriQuint Semiconductor announces its RF LDMOS power transistor line that supports the needs of wireless telecommunications base stations and MMDS (multichannel multipoint distribution service) applications. RF power transistors based on silicon LDMOS function well in signal amplification for RF systems due to their high linearity, gain and efficiency....

LISTED UNDER: Semiconductors, Transistors

Miniature Bipolar NPN/PNP Transistors Available in the SOT23FF Package

October 10, 2007 8:43 am | Product Releases | Comments

Now available in the SOT23FF package, Zetex Semiconductors’ miniature bipolar NPN and PNP transistors are well suited for MOSFET gate driving in newer power supplies. The transistors provide lower saturation voltage, higher current gain hold-up, improved circuit efficiency and cooler operation....

LISTED UNDER: Semiconductors, Transistors

Bipolar Junction Transistors

August 10, 2007 11:58 am | Product Releases | Comments

ON Semiconductor expands its low Vce(sat) bipolar junction transistors (BJTs) portfolio to include PNP and NPN devices that incorporate advanced silicon technology. These transistors deliver maximized power efficiency and longer battery life than traditional BJTs or planar MOSFETS. Suitable for a variety of portable applications, the low Vce(sat) BJTs are available in a multiple package options, including WDFN, SOT-23, SOT-223, SOT-563, Chi...

LISTED UNDER: Semiconductors, Transistors

Richardson Electronics Will Distribute Avago Technologies’ RFICs, Transistors and Diodes

February 27, 2007 7:34 am | Product Releases | Comments

Richardson Electronics announces a North American Distribution Partnership with Avago Technologies, of San Jose, California, to distribute its complete line of RFIC, Transistor, Schottky and PIN Diode, and millimeter wave (mmW) products. Avago's extensive line of RF semiconductors provides solutions for numerous markets including Cellular base station, WLAN, WiMAX, GPS, ISM, RFID, and mmW including Radio Links, VSAT and Military....

LISTED UNDER: Semiconductors, Diodes | Semiconductors, Transistors

Mid-voltage Bipolar Transistors

October 19, 2006 8:40 am | Product Releases | Comments

Zetex Semiconductors introduces a range of mid-voltage bipolar transistors in the SOT23 package, capable of handling a power dissipation of up to 1.25 W. With the 3 × 2.5 mm footprint, these seven NPN and six PNP devices help to increase circuit power density by replacing the much larger DPAK, SOT89 and SOT223 packaged parts....

LISTED UNDER: Semiconductors, Transistors


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