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Rugged LDMOS Ups the Power

June 5, 2013 9:43 am | by WDD Staff | Product Releases | Comments

NXP Semiconductors N.V. (Seattle, WA) has introduced the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions...

LISTED UNDER: Semiconductors, Transistors

MACOM's High-Power GaN in Plastic Transistor

May 17, 2013 11:01 am | by WDD Staff | Product Releases | Comments

M/A-COM Technology Solutions has introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. Scaling to peak pulse power levels of 100W – the highest among competing components in this product category.

LISTED UNDER: Semiconductors, Transistors

RFMW Introduces Dual LNA from TriQuint Semiconductor

May 17, 2013 10:45 am | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for TriQuint Semiconductor dual device amplifier model TQP3M9041. Spanning the frequency range of 2.4GHz to 4GHz, this high linearity, ultra-low noise figure LNA offers a 0.8dB noise figure in a balanced configuration at 1.95GHz.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC
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Touchstone Semiconductor’s TS3300 Boost Regulator

May 16, 2013 11:49 am | by WDD Staff | Product Releases | Comments

Touchstone Semiconductor has announced the TS3300 boost regulator. The TS3300 uses only 3.5 µA of supply current, and the TS3300’s efficiency performance is constant over a 100:1 span in output current. Additional features include anti-crush, automatic start-up current limiting.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

RFMW Introduces 600-Micron Discrete FET

May 15, 2013 11:28 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

RFMW, Ltd. (San Jose, CA) has announced the discrete 600-Micron GaAs pHEMT FET. The TGF2060 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Features include...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

ERG’s New LED Driver Series

May 13, 2013 12:00 pm | by WDD Staff | Product Releases | Comments

Display power supply specialist Endicott Research Group (ERG) has introduced its Large Display Solutions: low-cost, high-efficiency LED drivers and rails specifically designed for LCDs in the 19”-27” diagonal range.

LISTED UNDER: Power, Other | Semiconductors, Diodes | Semiconductors, Transistors

M/A-COM Technology Solutions’ New GaN on SiC HEMT Transistor

May 9, 2013 9:19 am | by WDD Staff | Product Releases | Comments

M/A-COM Technology Solutions Inc. (M/A-COM) has introduced a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transisto...

LISTED UNDER: Semiconductors, Transistors

AVX Extends TransGuard Varistor Series

April 26, 2013 8:56 am | by WDD Staff | Product Releases | Comments

AVX Corporation has added several new varistors to its trusted TransGuard and TransGuard Automotive Series. Based on AVX’s reliable zinc-oxide varistor technology, the extended TransGuard series provides customers with a much broader range of voltage and energy rating options...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC
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M/A-COM Technology Solutions' New Single-Channel CMOS Driver

April 26, 2013 8:41 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

M/A-COM Technology Solutions Inc.has introduced a new single-channel CMOS Driver for Microwave Switching Applications. The MADR-009269 is a high-performance, single-channel CMOS Driver that is used to translate TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Cypress’s New $25 PSoC 4 Pioneer Kit

April 10, 2013 11:09 am | by WDD Staff | Product Releases | Comments

Cypress Semiconductor Corp. [NASDAQ: CY] and Premier Farnell (London), have announced that customers can pre-order Cypress’s new PSoC 4 Pioneer Kit. Combined with the free PSoC Creator Integrated Design Environment...

LISTED UNDER: Boards & Modules | Development Kits / Platforms | Semiconductors, Diodes

RFMW Introduces 180-Micron pHEMT FET from TriQuint Semiconductor

April 5, 2013 10:38 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2018, a discrete 180-Micron pHEMT, which operates from DC to 20 GHz. The TGF2018 features TriQuint's standard 0.25 um power pHEMT production process and 55% power-added efficiency @ 1 dB compression.

LISTED UNDER: Semiconductors, MMIC | Semiconductors, SoC | Semiconductors, Transistors

Transphorm's GaN Silicon Transistors & Diodes

March 20, 2013 11:08 am | by WDD Staff | Product Releases | Comments

Transphorm Inc. has announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing a JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, MMIC | Semiconductors, Transistors

Extensive Range of LDMOS Transistors from STMicroelectronics

June 18, 2012 6:32 am | Product Releases | Comments

Family of Plastic-Packaged RF Power Transistors Ideally Suited for Portable and Fixed Wireless Communications Applications. Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for an extensive range of laterally diffused metal oxide semiconductor (LDMOS) transistors from STMicroelectronics (ST).

LISTED UNDER: Semiconductors, Transistors

C-band Gallium Nitride High-Electron Mobility Transistors Address Satellite Earth Stations

December 1, 2011 7:24 am | Product Releases | Comments

Mitsubishi Electric Corporation announced it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4–8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a s ample basis beginning January 10, 2012.

LISTED UNDER: Semiconductors, Transistors

HEMT Transistors and MMIC Enhance S-Band Radar Applications

July 12, 2011 7:18 am | Product Releases | Comments

Cree released a family of packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) with what is presented as the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solutions.

LISTED UNDER: Semiconductors, MMIC | Semiconductors, Transistors | Radar

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