Advertisement

RFMW Offers 285 W GaN Transistors from TriQuint

January 13, 2014 2:17 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint’s T1G2028536, a 285W GaN transistor available in a low thermal resistance, solder mount package as the T1G2028536–FS or flange mount package as the T1G2028536–FL. Both the –FS and -FL house the transistor in a ceramic NI-780 enclosure...

LISTED UNDER: Semiconductors, Transistors

TriQuint 6 GHz GaN LNA from RFMW

December 24, 2013 10:18 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. has announced design and sales support for the TGA2611, 2-6GHz LNA utilizing TriQuint’s GaN25 technology. GaN processes provide a highly robust input coupled with low noise figure and high gain...

LISTED UNDER: Embedded Systems & Networking | Transceivers, Satellite | Semiconductors, Transistors

Richardson RFPD’s 50 V Moisture-Resistant DMOS Transistor

December 9, 2013 5:23 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD announced immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST). The SD4933MR is an N-channel field-effect RF power transistor intended for use in 50 V...

LISTED UNDER: Semiconductors, Transistors
Advertisement

Richardson RFPD Introduces Two RF Power Vertical MOSFETs

November 12, 2013 3:07 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD recently announced availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi. The new high-power, high breakdown voltage, common source configuration devices offer excellent stability and...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Qualcomm Atheros Announces HomePlug AV2 Chip

November 12, 2013 11:13 am | by WDD Staff | Product Releases | Comments

Qualcomm recently announced that its subsidiary, Qualcomm Atheros, has introduced a new HomePlug AV2 product, the QCA7500, to deliver Gigabit-class performance and optimal coverage throughout the home using existing electrical wiring...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

50V GaN on SiC RF Power Transistor from Microsemi

November 11, 2013 3:26 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD (LaFox, IL) introduced a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).

LISTED UNDER: Semiconductors, Transistors

Infineon Broadens RF Portfolio with New Transistors

October 30, 2013 11:49 am | by WDD Staff | Product Releases | Comments

Infineon Technologies has introduced its 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application. The higher power output across the entire 470 – 806 MHz TV broadcast band gives amplifier designers the option to use fewer transistors to achieve target output power, which...

LISTED UNDER: Semiconductors, Transistors

TriQuint’s New GaN Solutions

October 17, 2013 1:16 pm | by WDD Staff | Product Releases | Comments

TriQuint Semiconductor announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.

LISTED UNDER: Semiconductors, Transistors
Advertisement

TriQuint Semiconductor Releases Internally Matched Gain Block

October 9, 2013 2:22 pm | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for the TQL9047 gain block from TriQuint Semiconductor.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Ultra-small P-channel Enhancement-Mode Power MOSFETs

October 2, 2013 11:04 am | by WDD Staff | Product Releases | Comments

Advanced Power Electronics has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

LISTED UNDER: Semiconductors, Transistors

MACOM’s New 600 W GaN on SiC Pulsed Power Transistor

September 25, 2013 3:31 pm | by WDD Staff | Product Releases | Comments

Internally-matched, 600 W Power Transistor Provides High Gain, Efficiency, and Ruggedness over the 1,030 to 1,090 MHz Bandwidth.

LISTED UNDER: Power, Other | Semiconductors, Transistors

RFMW Supports 120W GaN Transistors from TriQuint Semiconductor

September 17, 2013 12:31 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.

LISTED UNDER: Semiconductors, Transistors

Cree Releases Two New GaN HEMTs for L-Band Radar Systems

August 26, 2013 10:11 am | by WDD Staff | Product Releases | Comments

Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.

LISTED UNDER: Semiconductors, Transistors

RFMW Supports High Current, High Speed Driver from IXYS RF

July 2, 2013 5:08 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for IXYS RF model IXRFD631, a high-current CMOS gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Agilent Technologies Enhances Parameter Analyzer

June 24, 2013 10:23 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Agilent Technologies has announced source/monitor unit (SMU) and software enhancements to its B1500A semiconductor device analyzer, the industry’s leading semiconductor parameter analyzer. The new B1514A 50-µs pulse medium-current SMU gives a faster pulse at 30V/1A range plus oscilloscope-like viewing.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading