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Skyworks’ New High Linearity, Active Bias, Low Noise Amplifier

January 14, 2014 4:27 pm | by WDD Staff | Product Releases | Comments

Skyworks Solutions has introduced a 0.7-1.2 gigahertz, single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations...

LISTED UNDER: Low-noise | Semiconductors, Transistors

Freescale Airfast RF Power LDMOS Transistors

January 13, 2014 5:07 pm | by WDD Staff | Product Releases | Comments

Freescale Semiconductor has introduced two new Airfast RF power solutions that cover all major cellular infrastructure bands and deliver industry-leading gain in a compact package. The AFT27S006N is the next-generation follow-on to the popular MW6S004N product – the industry’s workhorse driver deployed broadly in world-class wireless infrastructure installations worldwide...

LISTED UNDER: Semiconductors, Transistors

New AP4034 Family of Power MOSFETs Suit DC-DC Converter Applications

January 13, 2014 4:56 pm | by WDD Staff | Product Releases | Comments

Advanced Power Electronics has introduced the new AP4034 family of 30V N-channel enhancement-mode power MOSFETs in several popular package alternatives to meet differing cost/performance points. All the AP4034 MOSFETs provide fast switching performance and feature a low typical gate charge of 15nC for good switching performance...

LISTED UNDER: Switches, IC | Semiconductors, MMIC | Semiconductors, Transistors
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RFMW Offers 285 W GaN Transistors from TriQuint

January 13, 2014 2:17 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint’s T1G2028536, a 285W GaN transistor available in a low thermal resistance, solder mount package as the T1G2028536–FS or flange mount package as the T1G2028536–FL. Both the –FS and -FL house the transistor in a ceramic NI-780 enclosure...

LISTED UNDER: Semiconductors, Transistors

TriQuint 6 GHz GaN LNA from RFMW

December 24, 2013 10:18 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. has announced design and sales support for the TGA2611, 2-6GHz LNA utilizing TriQuint’s GaN25 technology. GaN processes provide a highly robust input coupled with low noise figure and high gain...

LISTED UNDER: Embedded Systems & Networking | Transceivers, Satellite | Semiconductors, Transistors

Richardson RFPD’s 50 V Moisture-Resistant DMOS Transistor

December 9, 2013 5:23 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD announced immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST). The SD4933MR is an N-channel field-effect RF power transistor intended for use in 50 V...

LISTED UNDER: Semiconductors, Transistors

Richardson RFPD Introduces Two RF Power Vertical MOSFETs

November 12, 2013 3:07 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD recently announced availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi. The new high-power, high breakdown voltage, common source configuration devices offer excellent stability and...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Qualcomm Atheros Announces HomePlug AV2 Chip

November 12, 2013 11:13 am | by WDD Staff | Product Releases | Comments

Qualcomm recently announced that its subsidiary, Qualcomm Atheros, has introduced a new HomePlug AV2 product, the QCA7500, to deliver Gigabit-class performance and optimal coverage throughout the home using existing electrical wiring...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC
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50V GaN on SiC RF Power Transistor from Microsemi

November 11, 2013 3:26 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD (LaFox, IL) introduced a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).

LISTED UNDER: Semiconductors, Transistors

Infineon Broadens RF Portfolio with New Transistors

October 30, 2013 11:49 am | by WDD Staff | Product Releases | Comments

Infineon Technologies has introduced its 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application. The higher power output across the entire 470 – 806 MHz TV broadcast band gives amplifier designers the option to use fewer transistors to achieve target output power, which...

LISTED UNDER: Semiconductors, Transistors

TriQuint’s New GaN Solutions

October 17, 2013 1:16 pm | by WDD Staff | Product Releases | Comments

TriQuint Semiconductor announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.

LISTED UNDER: Semiconductors, Transistors

TriQuint Semiconductor Releases Internally Matched Gain Block

October 9, 2013 2:22 pm | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for the TQL9047 gain block from TriQuint Semiconductor.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Ultra-small P-channel Enhancement-Mode Power MOSFETs

October 2, 2013 11:04 am | by WDD Staff | Product Releases | Comments

Advanced Power Electronics has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

LISTED UNDER: Semiconductors, Transistors

MACOM’s New 600 W GaN on SiC Pulsed Power Transistor

September 25, 2013 3:31 pm | by WDD Staff | Product Releases | Comments

Internally-matched, 600 W Power Transistor Provides High Gain, Efficiency, and Ruggedness over the 1,030 to 1,090 MHz Bandwidth.

LISTED UNDER: Power, Other | Semiconductors, Transistors

RFMW Supports 120W GaN Transistors from TriQuint Semiconductor

September 17, 2013 12:31 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.

LISTED UNDER: Semiconductors, Transistors

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