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Richardson RFPD Introduces Two RF Power Vertical MOSFETs

November 12, 2013 3:07 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD recently announced availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi. The new high-power, high breakdown voltage, common source configuration devices offer excellent stability and...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Qualcomm Atheros Announces HomePlug AV2 Chip

November 12, 2013 11:13 am | by WDD Staff | Product Releases | Comments

Qualcomm recently announced that its subsidiary, Qualcomm Atheros, has introduced a new HomePlug AV2 product, the QCA7500, to deliver Gigabit-class performance and optimal coverage throughout the home using existing electrical wiring...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

50V GaN on SiC RF Power Transistor from Microsemi

November 11, 2013 3:26 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD (LaFox, IL) introduced a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).

LISTED UNDER: Semiconductors, Transistors
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Infineon Broadens RF Portfolio with New Transistors

October 30, 2013 11:49 am | by WDD Staff | Product Releases | Comments

Infineon Technologies has introduced its 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application. The higher power output across the entire 470 – 806 MHz TV broadcast band gives amplifier designers the option to use fewer transistors to achieve target output power, which...

LISTED UNDER: Semiconductors, Transistors

TriQuint’s New GaN Solutions

October 17, 2013 1:16 pm | by WDD Staff | Product Releases | Comments

TriQuint Semiconductor announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.

LISTED UNDER: Semiconductors, Transistors

TriQuint Semiconductor Releases Internally Matched Gain Block

October 9, 2013 2:22 pm | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for the TQL9047 gain block from TriQuint Semiconductor.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Ultra-small P-channel Enhancement-Mode Power MOSFETs

October 2, 2013 11:04 am | by WDD Staff | Product Releases | Comments

Advanced Power Electronics has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

LISTED UNDER: Semiconductors, Transistors

MACOM’s New 600 W GaN on SiC Pulsed Power Transistor

September 25, 2013 3:31 pm | by WDD Staff | Product Releases | Comments

Internally-matched, 600 W Power Transistor Provides High Gain, Efficiency, and Ruggedness over the 1,030 to 1,090 MHz Bandwidth.

LISTED UNDER: Power, Other | Semiconductors, Transistors
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RFMW Supports 120W GaN Transistors from TriQuint Semiconductor

September 17, 2013 12:31 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.

LISTED UNDER: Semiconductors, Transistors

Cree Releases Two New GaN HEMTs for L-Band Radar Systems

August 26, 2013 10:11 am | by WDD Staff | Product Releases | Comments

Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.

LISTED UNDER: Semiconductors, Transistors

RFMW Supports High Current, High Speed Driver from IXYS RF

July 2, 2013 5:08 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for IXYS RF model IXRFD631, a high-current CMOS gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Agilent Technologies Enhances Parameter Analyzer

June 24, 2013 10:23 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Agilent Technologies has announced source/monitor unit (SMU) and software enhancements to its B1500A semiconductor device analyzer, the industry’s leading semiconductor parameter analyzer. The new B1514A 50-µs pulse medium-current SMU gives a faster pulse at 30V/1A range plus oscilloscope-like viewing.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Cree Ships Over Two Million GaN HEMT Devices for Telecom Infrastructure

June 19, 2013 12:46 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Cree reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.

LISTED UNDER: Semiconductors, Transistors | Amplifiers, Other | Transmission, Other

Peregrine’s Next-Generation Phase-Locked Loop Device

June 13, 2013 12:38 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Peregrine Semiconductor announced from booth #1811 at the International Microwave Symposium in Seattle it has further expanded its high-frequency product line with the Integer-N PE33241 Phase-Locked Loop (PLL). The UltraCMOS technology-based PLL features a very low phase noise Figure of Merit.

LISTED UNDER: Phase Shifters | Semiconductors, Diodes | Semiconductors, FET

Rugged LDMOS Ups the Power

June 5, 2013 9:43 am | by WDD Staff | Product Releases | Comments

NXP Semiconductors N.V. (Seattle, WA) has introduced the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions...

LISTED UNDER: Semiconductors, Transistors

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