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Semiconductors, SiGe

Richardson RFPD Introduces Two RF Power Vertical MOSFETs

November 12, 2013 3:07 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD recently announced availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi. The new high-power, high breakdown voltage, common source configuration devices offer excellent stability and...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Qualcomm Atheros Announces HomePlug AV2 Chip

November 12, 2013 11:13 am | by WDD Staff | Product Releases | Comments

Qualcomm recently announced that its subsidiary, Qualcomm Atheros, has introduced a new HomePlug AV2 product, the QCA7500, to deliver Gigabit-class performance and optimal coverage throughout the home using existing electrical wiring...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

TriQuint Semiconductor Releases Internally Matched Gain Block

October 9, 2013 2:22 pm | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for the TQL9047 gain block from TriQuint Semiconductor.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC
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RFMW Supports High Current, High Speed Driver from IXYS RF

July 2, 2013 5:08 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for IXYS RF model IXRFD631, a high-current CMOS gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Agilent Technologies Enhances Parameter Analyzer

June 24, 2013 10:23 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Agilent Technologies has announced source/monitor unit (SMU) and software enhancements to its B1500A semiconductor device analyzer, the industry’s leading semiconductor parameter analyzer. The new B1514A 50-µs pulse medium-current SMU gives a faster pulse at 30V/1A range plus oscilloscope-like viewing.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Peregrine’s Next-Generation Phase-Locked Loop Device

June 13, 2013 12:38 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Peregrine Semiconductor announced from booth #1811 at the International Microwave Symposium in Seattle it has further expanded its high-frequency product line with the Integer-N PE33241 Phase-Locked Loop (PLL). The UltraCMOS technology-based PLL features a very low phase noise Figure of Merit.

LISTED UNDER: Phase Shifters | Semiconductors, Diodes | Semiconductors, FET

RFMW Introduces Dual LNA from TriQuint Semiconductor

May 17, 2013 10:45 am | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for TriQuint Semiconductor dual device amplifier model TQP3M9041. Spanning the frequency range of 2.4GHz to 4GHz, this high linearity, ultra-low noise figure LNA offers a 0.8dB noise figure in a balanced configuration at 1.95GHz.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Touchstone Semiconductor’s TS3300 Boost Regulator

May 16, 2013 11:49 am | by WDD Staff | Product Releases | Comments

Touchstone Semiconductor has announced the TS3300 boost regulator. The TS3300 uses only 3.5 µA of supply current, and the TS3300’s efficiency performance is constant over a 100:1 span in output current. Additional features include anti-crush, automatic start-up current limiting.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC
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RFMW Introduces 600-Micron Discrete FET

May 15, 2013 11:28 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

RFMW, Ltd. (San Jose, CA) has announced the discrete 600-Micron GaAs pHEMT FET. The TGF2060 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Features include...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

AVX Extends TransGuard Varistor Series

April 26, 2013 8:56 am | by WDD Staff | Product Releases | Comments

AVX Corporation has added several new varistors to its trusted TransGuard and TransGuard Automotive Series. Based on AVX’s reliable zinc-oxide varistor technology, the extended TransGuard series provides customers with a much broader range of voltage and energy rating options...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

M/A-COM Technology Solutions' New Single-Channel CMOS Driver

April 26, 2013 8:41 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

M/A-COM Technology Solutions Inc.has introduced a new single-channel CMOS Driver for Microwave Switching Applications. The MADR-009269 is a high-performance, single-channel CMOS Driver that is used to translate TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Cypress’s New $25 PSoC 4 Pioneer Kit

April 10, 2013 11:09 am | by WDD Staff | Product Releases | Comments

Cypress Semiconductor Corp. [NASDAQ: CY] and Premier Farnell (London), have announced that customers can pre-order Cypress’s new PSoC 4 Pioneer Kit. Combined with the free PSoC Creator Integrated Design Environment...

LISTED UNDER: Boards & Modules | Development Kits / Platforms | Semiconductors, Diodes

High Speed SiGe Process Replaces 8 GaAs Chips, Lowering Cost and Increasing Integration

July 2, 2009 9:00 am | Product Releases | Comments

SAN DIEGO & NEWPORT BEACH, Calif.--(BUSINESS WIRE) -- The University of California, San Diego (UCSD), provider of a leading program in microwave and millimeter-wave RFICs and mixed-signal, and Jazz Semiconductor®, a Tower Group Company today announced that they have collaborated to develop a two-antenna quad-beam RFIC phased array receiver covering the 11-15 GHz frequency range....

LISTED UNDER: Semiconductors, SiGe

130 nm SiGe BiCMOS Processes Optimize Cost and Performance

June 19, 2007 11:51 am | Product Releases | Comments

HBTs feature a uniquely engineered fabrication process and new epitaxial materials optimized for wireless communications systems. David Cheskis, Ph.D., Jazz Semiconductor Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) are capable of much better performance than comparably sized CMOS devices....

LISTED UNDER: Semiconductors, SiGe

SiGe Medium-Power Discrete Component

October 19, 2006 8:40 am | Product Releases | Comments

Sirenza Microdevices announces the release of the Silicon Germanium (SiGe) high-linearity, medium power discrete product. The SGA-9089Z offers versatility and high performance from 50 to 4000 MHz. It can be biased from 2.7 to 3.3 V over a wide range of currents to deliver the optimum combination of linearity, noise figure and power up to 24 dBm....

LISTED UNDER: Semiconductors, SiGe

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