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SiGe Transistor

November 29, 2001 8:38 am | Product Releases | Comments

California Eastern Laboratories (CEL) has announced the availability of a new Silicon Germanium low noise transistor from NEC. Ideal for use as a first stage LNA or oscillator in 1.6, 1.9, 2.4, 3.5, or 5.8 GHz designs, the NESG2030M04 delivers great performance in an ultraminiature package. Specification features (@ 2 GHz) include low noise of 0....

LISTED UNDER: Semiconductors, SiGe
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SiGe Heterojunction Bipolar Transistors

October 30, 2001 8:03 am | Product Releases | Comments

Toshiba introduced a family of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba's line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, currently offering low noise levels, and a high-power gain transistor, designated the MT4S101U....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

SiGe HBT IF Receiver/Demodulator Line

October 22, 2001 4:34 am | Product Releases | Comments

Stanford Microdevices introduced a new silicon germanium (SiGe) IF receiver/demodulator ideally suited to 2G, 2.5G, 3G, WLAN and fixed wireless infrastructure applications. The SRF-2016 extends Stanford Microdevices' offering of SiGe IF receiver/demodulators and complements the already-released 65 to 300 MHz SRF-1016....

LISTED UNDER: Semiconductors, SiGe | Modulators

SiGe:C Integrated RF Cascode Amplifier

September 28, 2001 10:41 am | Product Releases | Comments

Motorola Inc.'s Semiconductor Products Sector has introduced a cost-effective, high isolation cascode amplifier using Silicon Germanium:Carbon (SiGe:C) technology. This unique amplifier can help to simplify RF designs for 100 MHz to 2.5 GHz applications, and is available in the ultra-small SOT-343R miniature surface mount package....

LISTED UNDER: Semiconductors, SiGe

SiGe Active Receive Mixers

September 28, 2001 10:01 am | Product Releases | Comments

Stanford Microdevices introduced a new family of silicon germanium (SiGe) active receive mixers ideally suited to 2G, 2.5G, 3G, WLAN, and fixed-wireless infrastructure applications. The SRM-1016 and SRM-3016 extend Stanford Microdevices' offering of silicon germanium (SiGe) active receive mixers and complement the already-released 1700 to 2300 MHz SRM-2016....

LISTED UNDER: Semiconductors, SiGe

SiGe Low Noise Amplifier

August 13, 2001 11:02 am | Product Releases | Comments

Atmel® announced a new triple gain low-noise amplifier (LNA) manufactured in Silicon-Germanium (SiGe) technology. The IC T0952 is a new member of Atmel's SiGe LNA family and can be used for conventional superheterodyne or direct-conversion receivers in 1800 MHz to 2000 MHz PCN (GSM 1800) and PCS mobile phone applications....

LISTED UNDER: Semiconductors, SiGe

RF SiGe Front End Integrated Circuit

June 28, 2001 7:33 am | Product Releases | Comments

Atmel® announced the availability of its well-known highly integrated RF Silicon-Germanium (SiGe) front end IC (including a low-noise amplifier and a power amplifier) for the radio part of long range, 100 meter, Bluetooth™ systems in Flipchip technology. Due to Flipchip technology, the T7024 is much smaller and more cost-effective than conventionally-packaged Gallium-Arsenide (GaAs) solutions....

LISTED UNDER: Semiconductors, SiGe

SiGe Low Noise Amplifier Provides 1.8 dB for 802.11a

June 20, 2001 5:03 am | Product Releases | Comments

Maxim Integrated Products introduced a 5 GHz SiGe LNA optimized for 802.11a and HiperLAN2 WLAN systems. The MAX2648 provides 17 dB gain, 1.8 dB noise figure, and 0 dBm input IP3 at 5.2 GHz while consuming 12mA. The high gain, low noise, and high linearity performance make it flexible for use as a first stage LNA, an LO buffer, or a transmitter driver amplifier....

LISTED UNDER: Semiconductors, SiGe

5 GHz SiGe Low Noise Amplifier Provides 1.8 dB for 802.11a

April 6, 2001 5:21 am | Product Releases | Comments

Maxim Integrated Products introduced a 5 GHz SiGe LNA optimized for 802.11a and HiperLAN2 WLAN systems. The MAX2648 provides 17 dB gain, 1.8 dB noise figure, and 0 dBm input IP3 at 5.2 GHz while consuming 12mA. The high gain, low noise, and high linearity performance make it flexible for use as a first stage LNA, an LO buffer, or a transmitter driver amplifier....

LISTED UNDER: Semiconductors, SiGe

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