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SiGe Discrete

August 14, 2006 6:48 am | Product Releases | Comments

Sirenza Microdevices has announced its Silicon Germanium (SiGe) high linearity, medium power discrete product. The SGA-8543Z offers versatility and high performance from 50 to 3500 MHz. It can be biased from 2.7 to 3.3 V over a wide range of currents to deliver a combination of linearity, noise figure and power up to 20 dBm....

LISTED UNDER: Semiconductors, SiGe

SiGe Front-End IC

December 30, 2005 7:16 am | Product Releases | Comments

Atmel® announces the ATR0981, a Silicon Germanium (SiGe) based front-end IC. The use of SiGe technology and the device's operating frequency range (300 to 500 MHz) make possible a broad range of applications, from handheld family radios (private mobile radios, PMR) to meter readers. It is easy to design applications with low external component counts using this front-end device because of its high level of integration, including a power ...

LISTED UNDER: Semiconductors, SiGe

SiGe BiCMOS Plays a Growing Role in the Mobile Platform

December 8, 2005 6:07 am | Product Releases | Comments

Lower costs and advancements in SiGe BiCMOS offer significant benefits to the wireless community. By Paul Kempf Glossary of Acronyms BiCMOS — Bipolar Complementary Metal-oxide Semiconductor CCK — Complementary Code Keying (RF modulation) CMOS — Complementary Metal Oxide Semiconductor COT — Customer-Owned Tooling E911 — Enhanced fT — Tr...

LISTED UNDER: Semiconductors, SiGe
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Packaging for SiGe Transistors

August 3, 2004 5:24 am | Product Releases | Comments

NEC introduces a flat lead package developed specifically for use with its high breakdown voltage SiGe transistors. The M16 package measures 1.2 × 1.0 × 0.5 mm (including leads). Available in the M16 package are the NESG2021, NESG2031, and NESG2101. These transistors are suited for use in LNAs, gain blocks, and oscillators in a variety of applications from 800 MHz to 6 GHz where small size and low profile are critical....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

Active Bias SiGe Gain Blocks

April 7, 2004 11:04 am | Product Releases | Comments

Sirenza introduces the low cost SGB product family. This family includes 6 SiGe HBT Darlington amplifiers, each of which incorporates an internally regulated bias circuit, thus eliminating the need for a bias-dropping resistor. The products are designed for low power consumption applications, operating from supply voltages of 3 to 5 V....

LISTED UNDER: Semiconductors, SiGe

SiGe Prescaler

February 2, 2004 8:06 am | Product Releases | Comments

Hittite introduces a standard product prescaler fabricated in SiGe. This Divide-by-4 is suited for high volume synthesizer applications in DBS/CATV, WLAN, Fixed Wireless, WLL, Cellular/3G, Microwave Radio and VSAT. The HMC426MS8 SiGe MMIC Divide-by-4 Prescaler operates from DC (with a square wave input) to 4 GHz input frequency, and accepts a input power range of 㪧 to +10 dBm....

LISTED UNDER: Semiconductors, SiGe

Cascadable SiGe Gain Block Amplifiers

February 2, 2004 8:06 am | Product Releases | Comments

Hittite announces the release of three plastic packaged SiGe MMIC Gain Block Amplifiers, the HMC476MP86, HMC479MP86, and HMC481MP86, which are suited for wireless infrastructure/handhelds, test equipment, microwave radio and military COTS applications from DC to 6 GHz. Across the product line small signal gain ranges from 15 to 20 dB at 1 GHz, and 13 to 18 dB at 2 GHz....

LISTED UNDER: Semiconductors, SiGe

SiGe Extends Its Reach: <br>Power Amplifiers Supply Wireless and Cellular Applications

October 28, 2003 11:15 am | Product Releases | Comments

New engineering techniques allow SiGe to be used in high-power amplifiers for CDMA, GSM, and WLAN applications; enable the next generation of integration. By Jerry Loraine and Steve Kovacic, SiGe Semiconductor Silicon germanium (SiGe) has grown from a promising technology to a leading-edge solution for current and next-generation mobile devices, including cellular, wireless local area network (WLAN), and Bluetooth....

LISTED UNDER: Semiconductors, SiGe
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SiGe ICs

November 1, 2002 6:04 am | Product Releases | Comments

The MAX9989/MAX9990 are +20 dBm LO buffers. These single ICs provide ۫ dB output power variance while replacing three discrete amplifiers, a coupler, and dozens of biasing components. They are ideal for cellular/GSM/DCS/PCS, and UMTS base station applications. The designer can set the output power levels from +14 dBm to +20 dBm....

LISTED UNDER: Semiconductors, SiGe

SiGe Power Amplifier

September 27, 2002 6:33 am | Product Releases | Comments

The MAX2247 PA is available in the tiny 3 x 4 UCSP™ measuring 1.5 × 2.0 mm. The device is ideal for small form factor WLAN applications. The MAX2247 integrates a three-stage power amplifier with on-chip input and interstage match, output power detector, and power management circuitry. The power detector provides over 20 dB of dynamic range with ۪....

LISTED UNDER: Semiconductors, SiGe

SiGe Transistors

September 27, 2002 6:07 am | Product Releases | Comments

The NESG2021 and NESG2031 are ideal for use as LNA devices in WLAN and short-range wireless applications. They are housed in a miniature, low profile, flat lead M05 packaged. The NESG2021 features a noise figure of 0.9 dB at 2 GHz and 1.3 dB at 5.2 GHz; associated gain is 18 dB at 2 GHz and 11 dB at 5....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

SiGe LNA Transistor

September 11, 2002 5:17 am | Product Releases | Comments

     A low noise figure and excellent linearity make the NESG2101M05 an ideal first stage device for 802.11a W-LAN, CDMA, and OFDM transceiver applications. Its high P 1dB makes it an excellent driver output stage in low power transmitters. Its high V CEO rating means it can be operated at voltages up to 5 V....

LISTED UNDER: Semiconductors, SiGe

SiGe Driver/Receiver

September 11, 2002 5:17 am | Product Releases | Comments

The NBSG16VS is a 2.5V / 3.3V Silicon Germanium (SiGe) differential driver/receiver with a variable output swing that can be programmed to provide output amplitudes ranging between 100 mV to 700 mV peak-to-peak. The NBSG16VS delivers ultra low jitter, improved signal integrity, a small footprint and optimum performance for 10 Gbps data rates....

LISTED UNDER: Semiconductors, SiGe

SiGe Fabrication Process

May 6, 2002 10:49 am | Product Releases | Comments

A new, high-speed Silicon Germanium (SiGe) fabrication process has been brought online by Micrel. This new, 0.6 μm ASSET-2 SiGe process gives Micrel the necessary technology to move into the 10 Gbps communication space. Micrel's new GigaPro™ product line will address high-speed applications with data rates in excess of 10 Gbps....

LISTED UNDER: Semiconductors, SiGe

CSR Extends Relationship with SiGe Semiconductor, Selects PA2423L Bluetooth Class 1 Power Amplifier for BlueCore2 Reference Design

April 22, 2002 12:40 pm | Product Releases | Comments

SiGe Semiconductor announced that CSR (Cambridge Silicon Radio) has chosen SiGe's PA2423L Class 1 Bluetooth(TM) power amplifier for its BlueCore(TM)2 reference design. The BlueCore2 reference design is the third of CSR's BlueCore-based development systems to integrate a power amplifier from SiGe Semiconductor's PA2423 family of devices....

LISTED UNDER: Semiconductors, SiGe

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