MMIC Mixer
August 6, 2002 10:26 am | Product Releases | CommentsThe MAMXSS0003 is a low-side LO MMIC mixer optimized for use in 1.8 GHz to 2.2 GHz cellular base stations and wireless communications infrastructure. Fabricated on a 1 micron GaAs MESFET process, this mixer is well suited for use as an up/down converter or modulator for multi-mode transmitters and receivers....
LISTED UNDER: Semiconductors, MMICMMIC Power Amplifier
June 4, 2002 9:35 am | Product Releases | CommentsModel CMM1430-KU is a 1 watt power amplifier for transmit subsystem function in Ku-band VSAT applications. The amplifier operates from 13.75 to 14.50 GHz and offers 34.5 dB of linear gain, 32 dBm saturated output power and 50 ohm internal matching. The CMM1430-KU is packaged in a space-efficient flange package designed with a base material of gold-plated copper/moly composite, which offers excellent thermal dissipation....
LISTED UNDER: Semiconductors, MMICImproving MMIC and RFIC Design Flows
May 8, 2002 8:21 am | Product Releases | CommentsNew EDA technologies like Microwave Office 2002 and new foundry libraries help to streamline the development of RF and microwave ICs. By Ted Miracco, Applied Wave Research, Inc. In the 1990s, digital application specific integrated circuit (ASIC) designers experienced a process and productivity revolution that was brought about by advances in electronic design automation (EDA)....
LISTED UNDER: Semiconductors, MMICHBT MMIC Power Amplifiers
May 6, 2002 12:03 pm | Product Releases | CommentsHittite Microwave introduces a highly efficient family of Heterojunction Bipolar Transistor (HBT) MMIC Power Amplifiers, operating between 4.4 - 7.0 GHz with up to +29 dBm output power. These amplifiers are ideal for low cost UNII and HiperLAN applications from 5.0 - 6.0 GHz. The HMC415LP3 provides 20 dB of gain and +26 dBm of saturated power at 34% PAE from a +3....
LISTED UNDER: Semiconductors, MMICGaAs MMIC SPDT Switch
May 6, 2002 7:16 am | Product Releases | CommentsCalifornia Eastern Labs now offers NEC's latest in ultraminiature GaAs MMIC SPDT switches: the UPG2008TK. Housed in NEC's newest 1.3 mm × 1.5 mm six pin, recessed lead TK package, the UPG2008TK features a footprint thatss less than half the size of conventional SOT-363-style package switches....
LISTED UNDER: Semiconductors, MMICMMIC Mixer With Integrated LO and IF Amplifiers
April 4, 2002 8:30 am | Product Releases | CommentsHittite Microwave introduces a high linearity down-converter receiver IC designed to support WCDMA applications where a high third order intercept (OIP3) point is required. A passive mixer coupled with a high dynamic range IF amplifier achieves an OIP3 of +29 dBm, and an input IP3 of +19 dBm. The HMC421QS16 provides a gain of 8 dB and 10 dB typical single sideband noise....
LISTED UNDER: Semiconductors, MMICMMIC Mixer Line Expanded
February 27, 2002 9:34 am | Product Releases | CommentsWJ Communications announced the expansion of its MMIC mixer line with two low-cost high linearity models. These passive gallium arsenide (GaAs) IC mixers are ideally suited for 3G UMTS wireless infrastructure equipment. The MH101 and MH102 mixers offer high dynamic range with Input IP3 greater than 30 dBm and Input P1 dB of 16 dBm across the entire UMTS frequency range of 1....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Receiver
February 27, 2002 9:34 am | Product Releases | CommentsMimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by a single transistor "Tee" attenuator and an image reject fundamental resistive high electron mobility transistor (HEMT) mixer....
LISTED UNDER: Semiconductors, MMICMMIC Receiver for High Index Modulation Schemes
January 29, 2002 3:56 am | Product Releases | CommentsMimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by an image reject fundamental resistive high electron mobility transistor (HEMT) mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....
LISTED UNDER: Semiconductors, MMIC36 to 40 GHz GaAs MMIC Up-Converter
December 3, 2001 3:38 am | Product Releases | CommentsMimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) up-converter, which is comprised of a pair of sub-harmonic mixers configured to form an image reject mixer. This is followed by a two stage low noise amplifier (LNA). The image reject mixer removes the need for a bandpass filter after the mixer to suppress the unwanted sideband....
LISTED UNDER: Semiconductors, MMICHighly Integrated GaAs MMIC Receiver
November 29, 2001 8:39 am | Product Releases | CommentsMimix Broadband announced the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver, which is comprised of a two stage low noise amplifier (LNA) followed by a pair of sub-harmonic mixers, configured to form an image reject mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....
LISTED UNDER: Semiconductors, MMICGaAs pHEMT MMIC Buffer Amplifier
October 30, 2001 8:03 am | Product Releases | CommentsMimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage buffer amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this gain block amplifier covers the 36 to 43 GHz frequency bands....
LISTED UNDER: Semiconductors, MMICKu-Band MMIC VCO
September 28, 2001 10:41 am | Product Releases | CommentsHittite introduces a Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated divide-by-8 prescaler packaged in a low cost, surface mount 16 leaded QSOP package with an exposed base for improved RF and thermal performance. The HMC401QS16G features a Pout of > -8 dBm from a 5 V supply, SSB Phase Noise of -110 dBc/Hz @ 100 kHz, and no external resonator is needed....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Up-Converter
August 30, 2001 9:29 am | Product Releases | CommentsMimix Broadband announced the introduction of a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) up-converter on a single chip. This device is a single fundamental mixer followed by a single stage amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the up-converter covers the 17 to 27 GHz frequency band....
LISTED UNDER: Semiconductors, MMICSurface Mount GaAs HBT MMIC Divide-by-4 Prescaler
June 28, 2001 7:33 am | Product Releases | CommentsHittite Microwave introduces a low noise, Divide-by-4 Static Prescaler with InGaP GaAs HBT technology in an 8 lead surface mount plastic package. The HMC362S8G features a wide operating input window and low additive SSB phase noise of -149 dBc/Hz at 100 kHz offset. This device operates from DC (with a square wave input) to 12 GHz input frequency with a single +5....
LISTED UNDER: Semiconductors, MMIC
