Advertisement

MMIC VCO

March 28, 2003 3:52 am | Product Releases | Comments

The HMC384LP4 is ideal for cellular/3G and broadband wireless data systems applications. This MMIC VCO requires no external components, consumes 35 mA from a single supply of +3 V, and provides +3.5 dBm buffered output power. The low phase noise performance of – 112 dBc/Hz at 100 kHz offset is excellent over temperature, shock, vibration, and process due to the monolithic structure of the oscillators....

LISTED UNDER: Semiconductors, MMIC

MMIC Amplifiers

March 28, 2003 3:52 am | Product Releases | Comments

The MHC455LP3 and HMC461LP3 amplifiers are ideal for a variety of PCS/3G wireless infrastructure applications offering +19 dBm and +20 dBm WCDMA channel output power respectively at – 45 dBc ACP. The 1/2 watt HMC455LP3 provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 V DC supply voltage....

LISTED UNDER: Semiconductors, MMIC

Low Noise MMIC VCO

February 25, 2003 12:07 pm | Product Releases | Comments

Hittite introduces a pair of GaAs InGaP HBT MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes and buffer amplifiers covering applications from 5.0 to 6.1 GHz. The HMC430LP4 and HMC431LP4 are ideal for C-band applications including 802.11a or HiperLAN WLAN, VSAT, UNII, and point-to-point radios....

LISTED UNDER: Semiconductors, MMIC
Advertisement

GaAs MMICs Catalog

January 27, 2003 10:31 am | Product Releases | Comments

Mimix Broadband announces a new version of its print product catalog. The catalog update includes new products, expanded datasheets with more comprehensive information and measurement curves, application notes, and a complete listing of the company's international sales representative network. The catalog includes critical performance parameters of MMIC devices, applications notes, and engineering guidelines....

LISTED UNDER: Semiconductors, MMIC

MMIC Mixer

August 6, 2002 10:26 am | Product Releases | Comments

The MAMXSS0003 is a low-side LO MMIC mixer optimized for use in 1.8 GHz to 2.2 GHz cellular base stations and wireless communications infrastructure. Fabricated on a 1 micron GaAs MESFET process, this mixer is well suited for use as an up/down converter or modulator for multi-mode transmitters and receivers....

LISTED UNDER: Semiconductors, MMIC

MMIC Power Amplifier

June 4, 2002 9:35 am | Product Releases | Comments

Model CMM1430-KU is a 1 watt power amplifier for transmit subsystem function in Ku-band VSAT applications. The amplifier operates from 13.75 to 14.50 GHz and offers 34.5 dB of linear gain, 32 dBm saturated output power and 50 ohm internal matching. The CMM1430-KU is packaged in a space-efficient flange package designed with a base material of gold-plated copper/moly composite, which offers excellent thermal dissipation....

LISTED UNDER: Semiconductors, MMIC

Improving MMIC and RFIC Design Flows

May 8, 2002 8:21 am | Product Releases | Comments

New EDA technologies like Microwave Office 2002 and new foundry libraries help to streamline the development of RF and microwave ICs. By Ted Miracco, Applied Wave Research, Inc. In the 1990s, digital application specific integrated circuit (ASIC) designers experienced a process and productivity revolution that was brought about by advances in electronic design automation (EDA)....

LISTED UNDER: Semiconductors, MMIC

HBT MMIC Power Amplifiers

May 6, 2002 12:03 pm | Product Releases | Comments

Hittite Microwave introduces a highly efficient family of Heterojunction Bipolar Transistor (HBT) MMIC Power Amplifiers, operating between 4.4 - 7.0 GHz with up to +29 dBm output power. These amplifiers are ideal for low cost UNII and HiperLAN applications from 5.0 - 6.0 GHz. The HMC415LP3 provides 20 dB of gain and +26 dBm of saturated power at 34% PAE from a +3....

LISTED UNDER: Semiconductors, MMIC
Advertisement

GaAs MMIC SPDT Switch

May 6, 2002 7:16 am | Product Releases | Comments

California Eastern Labs now offers NEC's latest in ultraminiature GaAs MMIC SPDT switches: the UPG2008TK. Housed in NEC's newest 1.3 mm × 1.5 mm six pin, recessed lead TK package, the UPG2008TK features a footprint thatss less than half the size of conventional SOT-363-style package switches....

LISTED UNDER: Semiconductors, MMIC

MMIC Mixer With Integrated LO and IF Amplifiers

April 4, 2002 8:30 am | Product Releases | Comments

Hittite Microwave introduces a high linearity down-converter receiver IC designed to support WCDMA applications where a high third order intercept (OIP3) point is required. A passive mixer coupled with a high dynamic range IF amplifier achieves an OIP3 of +29 dBm, and an input IP3 of +19 dBm. The HMC421QS16 provides a gain of 8 dB and 10 dB typical single sideband noise....

LISTED UNDER: Semiconductors, MMIC

MMIC Mixer Line Expanded

February 27, 2002 9:34 am | Product Releases | Comments

WJ Communications announced the expansion of its MMIC mixer line with two low-cost high linearity models. These passive gallium arsenide (GaAs) IC mixers are ideally suited for 3G UMTS wireless infrastructure equipment. The MH101 and MH102 mixers offer high dynamic range with Input IP3 greater than 30 dBm and Input P1 dB of 16 dBm across the entire UMTS frequency range of 1....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Receiver

February 27, 2002 9:34 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by a single transistor "Tee" attenuator and an image reject fundamental resistive high electron mobility transistor (HEMT) mixer....

LISTED UNDER: Semiconductors, MMIC

MMIC Receiver for High Index Modulation Schemes

January 29, 2002 3:56 am | Product Releases | Comments

Mimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by an image reject fundamental resistive high electron mobility transistor (HEMT) mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

36 to 40 GHz GaAs MMIC Up-Converter

December 3, 2001 3:38 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) up-converter, which is comprised of a pair of sub-harmonic mixers configured to form an image reject mixer. This is followed by a two stage low noise amplifier (LNA). The image reject mixer removes the need for a bandpass filter after the mixer to suppress the unwanted sideband....

LISTED UNDER: Semiconductors, MMIC

Highly Integrated GaAs MMIC Receiver

November 29, 2001 8:39 am | Product Releases | Comments

Mimix Broadband announced the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver, which is comprised of a two stage low noise amplifier (LNA) followed by a pair of sub-harmonic mixers, configured to form an image reject mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading