FREE WDD Email Newsletter
I/Q MMIC Mixers
June 30, 2005 8:37 am | Product Releases | CommentsHittite Microwave introduces seven GaAs MMIC I/Q mixers targeted to VSAT, microwave radio, test equipment, sensor and military applications from 6 to 23.6 GHz. The HMC526, HMC527 and HMC528 GaAs MMIC I/Q mixer die offer IF bandwidth of up to DC to 3.5 GHz, conversion loss as low as 7.5 dB and Input IP3 as high as +30 dBm....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Doubler
April 4, 2005 8:47 am | Product Releases | CommentsMimix Broadband announces a GaAs MMIC differentially fed doubler with RF buffer amplifier that can be used to drive fundamental mixer devices. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this doubler converts input signals in the 10 to 20 GHz frequency range to output signals in the 20 to 40 GHz frequency range, and has +13 dBm output drive at +0 dBm input....
LISTED UNDER: Semiconductors, MMICSMT MMIC Mixers and Amplifier
December 23, 2004 8:07 am | Product Releases | CommentsHittite announces two SMT MMIC mixers and a medium power amplifier for applications in microwave radios, sensors, and test equipment from 6 to 31 GHz. Providing good wideband performance, the HMC144LC4 is a high IP3 double-balanced MMIC passive mixer which can be used as an up or downconverter from 6 to 20 GHz....
LISTED UNDER: Semiconductors, MMICMMIC DPDT Switch
October 26, 2004 11:37 am | Product Releases | CommentsNEC's latest GaAs MMIC DPDT switch operates at 4.8 to 5.85 GHz and is designed specifically for antenna diversity switching. Available from CEL, the UPG2024TQ features low insertion loss, great power handing, and high isolation. Typical specs include: operating frequency 4.8 to 5.85 GHz; insertion loss 1....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Attenuator
April 29, 2004 10:06 am | Product Releases | CommentsHittite announces a single control, 450 to 2200 MHz voltage variable attenuator for applications in NMT, Cellular, PCS & 3G wireless infrastructure.With up to 48 dB of attenuation range, and +20 dBm of Input IP3 throughout its attenuation range, the HMC473MS8 is suitable for RF transmit and receive chain applications in virtually all wireless infrastructure applications....
LISTED UNDER: Semiconductors, MMICMMIC Switch
April 7, 2004 11:03 am | Product Releases | CommentsNEC's UPG2035T5F DPDT (Double Pole Double Throw) GaAs MMIC switch operates at frequencies of 2.4 to 2.5 GHz and 4.8 to 6 GHz, so it is suitable for antenna transfer switching between 802.11a and 802.11b/g. High isolation helps to reduce leakage between the Tx and Rx signals. High input power handling capability means higher linearity and lower distortion....
LISTED UNDER: Semiconductors, MMICBroadband MMIC Amplifiers
February 2, 2004 8:04 am | Product Releases | CommentsMini-Circuits introduces the new family of 'LEE' MMIC Amplifiers. Highly reliable, extremely broad band, and very low in cost. These amplifiers have excellent electrical performance, with up to 17.3 dBm flat output power to 10 GHz. There are five models being introduced in this new Mini-Circuits family....
LISTED UNDER: Semiconductors, MMICUsing ADS to Design an MMIC Amplifier
January 21, 2004 9:07 am | Product Releases | CommentsThis application note illustrates, through the design of a MMIC amplifier, common problems faced in designing, simulating, and producing the physical layout of an MMIC circuit, as well as validation steps needed to verify that the physical layout produces the desired result. By Andy Howard The amplifier design process depends on a number of factors, including desired specifications, availability of device models, designer preferenc...
LISTED UNDER: Semiconductors, MMICMMIC Amplifier
October 28, 2003 10:16 am | Product Releases | CommentsMimix Broadband announces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 35 to 45 GHz frequency bands....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Switches
October 28, 2003 10:16 am | Product Releases | CommentsHoused in NEC's low profile, flat lead TK package, the UPG2030TK measures 1.1 × 1.5 × 0.5 mm. The UPG2030TB is available in NEC's SOT-363 style TB package. Both versions deliver the same "no compromises" performance: frequency range is 0.5 to 2.5 GHz; P 1dB is +30 dBm typical @ 2....
LISTED UNDER: Switches, IC | Semiconductors, MMICMMIC Amplifier Application Note
September 2, 2003 8:37 am | Product Releases | CommentsAgilent Technologies announces an application note that details how to design an MMIC amplifier using Agilent's Advanced Design System (ADS) software. The 40-page document illustrates several common problems engineers face when designing, simulating and producing a physical layout of an MMIC circuit, as well as the validation steps needed to verify that the physical layout still produces the desired result....
LISTED UNDER: Semiconductors, MMICMMIC VCOs
September 2, 2003 8:28 am | Product Releases | CommentsHittite announces the release of eight MMIC voltage controlled oscillators (VCOs) that cover wireless infrastructure, test equipment, microwave radio and military applications between 2 and 6.8 GHz. The MMIC VCOs are fabricated on a production qualified process and integrate the resonator structure, negative resistance circuitry, tuning varactor and output buffer amplifier, thus requiring no external components....
LISTED UNDER: Semiconductors, MMICMMIC Buffer Amplifier
July 8, 2003 11:09 am | Product Releases | CommentsMimix Broadband announces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier, which can be operated with all three stages biased in parallel, or with independent bias for input and output stages as required to optimize performance. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 16 to 30 GHz...
LISTED UNDER: Semiconductors, MMICMMIC Mixers
May 30, 2003 11:38 am | Product Releases | CommentsThese MMICs utilize Quad-MOSFET mixers and include integral RF and LO baluns within a 3 × 3 mm, six-pin, DFN, surface mount package. An external IF balun can be used to accommodate single-ended operation if a differential signal is not desired. These passive mixers do not require biasing and have a noise figure of 8 dB....
LISTED UNDER: Semiconductors, MMICMMIC VCO
March 28, 2003 3:52 am | Product Releases | CommentsThe HMC384LP4 is ideal for cellular/3G and broadband wireless data systems applications. This MMIC VCO requires no external components, consumes 35 mA from a single supply of +3 V, and provides +3.5 dBm buffered output power. The low phase noise performance of – 112 dBc/Hz at 100 kHz offset is excellent over temperature, shock, vibration, and process due to the monolithic structure of the oscillators....
LISTED UNDER: Semiconductors, MMIC
