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Cree Demonstrates Industry's First C-Band GaN HEMT MMIC High-Power Amplifier for Satellite Communications

June 7, 2011 3:30 pm | Product Releases | Comments

Cree will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications during the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers.

LISTED UNDER: Semiconductors, MMIC

Sub-harmonically Pumped Mixer MMIC Performs Through 97 GHz

April 20, 2011 9:01 am | Product Releases | Comments

Endwave Corporation has announced the release of a new sub-harmonically pumped mixer (2 x LO) MMIC. Designed and manufactured in cooperation with WIN Semiconductor Corporation’s 0.1 µm PHEMT process development, Model EWM9002ZZ offers a broadband frequency performance of 67 to 97 GHz with LO to RF isolation of over 30 dB and a conversion loss of 12 dB....

LISTED UNDER: Semiconductors, MMIC

Band-Pass MMIC Filters in Compact SMT Packages

April 18, 2011 9:23 am | Product Releases | Comments

Hittite Corporation has introduced three new SMT packaged MMIC Band-Pass Tunable Filters which are ideal for pre-selection in multi-band communication systems, wideband radar, and in test and measurement equipment. Tunable over a 4.0 GHz to 19.0 GHz frequency range, these three new, ultra-compact, varactor-tuned, MMIC filters are inherently stable and their small physical size and insensitivity to environmental conditions provide a superior...

LISTED UNDER: Semiconductors, MMIC | Filters, IC
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DC to 20 GHz GaAs MMIC Distributed PA

October 5, 2010 10:19 am | Product Releases | Comments

Endwave Corporation has announced its Model EWH2001ZZ distributed power amplifier (PA) for commercial, industrial, and military applications from DC to 20 GHz. Based on GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) technology, the monolithic-microwave-integrated-circuit (MMIC) distributed PA delivers +26 dBm typical output power at 1-dB compression (P1dB) through 12 GHz and typically +23 dBm through 20 GHz....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Upconverter Covers 17.7 to 23.6 GHz

June 21, 2010 5:27 am | Product Releases | Comments

Hittite Microwave Corporation has introduced a new SMT packaged GaAs MMIC sub-harmonic upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3.

LISTED UNDER: Semiconductors, MMIC

High Performance GaAs MMIC Upconverter Covers 17.7 to 23.6 GHz

May 14, 2010 10:01 am | Product Releases | Comments

Hittite Microwave Corporation introduces a SMT packaged GaAs MMIC Sub-Harmonic Upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 is a GaAs MMIC Sub-Harmonic upconverter which delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3....

LISTED UNDER: Semiconductors, MMIC

Highly-Integrated GaAs MMIC Up-Converter Available in 4 x 4 mm QFN Package

April 8, 2010 1:19 pm | Product Releases | Comments

Now available from Mimix Broadband, Inc. is a 5.6 to 10.5 GHz GaAs MMIC up-converter that integrates a double balanced image reject mixer, LO buffer amplifier, RF buffer amplifier and variable attenuator, all within a fully molded 4x4mm QFN package. This RoHS-compliant, packaged up-converter has an output third order intercept point (OIP3) of +25 dBm, a conversion gain of 8 dB and a typical image rejection of 15 dBc.

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Delivers 32 dB Gain and Includes On-Chip Gate Bias Circuitry

January 22, 2010 10:01 am | Product Releases | Comments

Mimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications....

LISTED UNDER: Semiconductors, MMIC
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GaAs MMIC Offers 5.625º Least Significant Bit (LSB) Phase Shift

December 14, 2009 11:48 am | Product Releases | Comments

\ Mimix Asia, a subsidiary of Mimix Broadband, Inc., introduces a 7 to 13 GHz GaAs MMIC 6-bit phase shifter with LVCMOS/TTL compatible digital control. Identified as XS1000-BD, this device has digitally controlled 6-bit operation and a least significant bit (LSB) of 5.625°. The XS1000-BD delivers +25 dBm P1dB input compression and is well suited for beamforming, EW receivers, military and weather radar, and SATCOM applications.

LISTED UNDER: Semiconductors, MMIC

E-PHEMT MMIC Amplifier Combines Low Noise and High IP3

August 3, 2009 11:41 am | Product Releases | Comments

Mini-Circuits’ PMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 100 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier appropriate for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.

LISTED UNDER: Semiconductors, MMIC

High Dynamic Range MMIC Amplifier

August 3, 2009 9:13 am | Product Releases | Comments

Mini-Circuits PHA-1+ Ultra high dynamic range MMIC amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high Output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.

LISTED UNDER: Semiconductors, MMIC

First Complete, Front-to-Back Solution for MMIC, RF Module Design

June 11, 2009 5:07 am | Product Releases | Comments

Agilent Technologies Inc. introduces its Advanced Design System 2009 Update 1, a complete, front-to-back solution for monolithic microwave integrated circuit (MMIC) and RF module design. The release integrates 3-D electromagnetic (EM) analysis, wireless standards-based design verification libraries, X-parameter simulation, and statistical design and yield optimization....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Antenna Switch Supports Multi-band Transceiver Platforms

May 26, 2009 6:59 am | Product Releases | Comments

NEC's UPG2193T6E Single Pole Eight Throw (SP8T) GaAs MMIC antenna switch was developed specifically to meet the needs of new 3G UMTS, W-CDMA and Quad Band EDGE mobile phone designs. The UPG2193T6E was developed to meet the industry's need to replace the common two-switch solution with a single miniature device.

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Power Amp Delivers 10 W Output Power

May 26, 2009 6:59 am | Product Releases | Comments

Mimix Broadband, Inc. introduces a GaAs MMIC high power amplifier (HPA) with +41 dBm pulsed saturated output power and 17 dB small signal gain. This HPA, identified as XP1057-BD, uses a dual sided bias architecture, covers 13.5 to 16 GHz and achieves +48 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Power Amplifier Delivers 5 W Output Power

May 4, 2009 11:28 am | Product Releases | Comments

Mimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm saturated output power and 27 dB small signal gain. This HPA, identified as XP1058-BD, uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves +44 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....

LISTED UNDER: Semiconductors, MMIC

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