DC to 20 GHz GaAs MMIC Distributed PA
October 5, 2010 10:19 am | Product Releases | CommentsEndwave Corporation has announced its Model EWH2001ZZ distributed power amplifier (PA) for commercial, industrial, and military applications from DC to 20 GHz. Based on GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) technology, the monolithic-microwave-integrated-circuit (MMIC) distributed PA delivers +26 dBm typical output power at 1-dB compression (P1dB) through 12 GHz and typically +23 dBm through 20 GHz....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Upconverter Covers 17.7 to 23.6 GHz
June 21, 2010 5:27 am | Product Releases | CommentsHittite Microwave Corporation has introduced a new SMT packaged GaAs MMIC sub-harmonic upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3.
LISTED UNDER: Semiconductors, MMICHigh Performance GaAs MMIC Upconverter Covers 17.7 to 23.6 GHz
May 14, 2010 10:01 am | Product Releases | CommentsHittite Microwave Corporation introduces a SMT packaged GaAs MMIC Sub-Harmonic Upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 is a GaAs MMIC Sub-Harmonic upconverter which delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3....
LISTED UNDER: Semiconductors, MMICHighly-Integrated GaAs MMIC Up-Converter Available in 4 x 4 mm QFN Package
April 8, 2010 1:19 pm | Product Releases | CommentsNow available from Mimix Broadband, Inc. is a 5.6 to 10.5 GHz GaAs MMIC up-converter that integrates a double balanced image reject mixer, LO buffer amplifier, RF buffer amplifier and variable attenuator, all within a fully molded 4x4mm QFN package. This RoHS-compliant, packaged up-converter has an output third order intercept point (OIP3) of +25 dBm, a conversion gain of 8 dB and a typical image rejection of 15 dBc.
LISTED UNDER: Semiconductors, MMICGaAs MMIC Delivers 32 dB Gain and Includes On-Chip Gate Bias Circuitry
January 22, 2010 10:01 am | Product Releases | CommentsMimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Offers 5.625º Least Significant Bit (LSB) Phase Shift
December 14, 2009 11:48 am | Product Releases | Comments\ Mimix Asia, a subsidiary of Mimix Broadband, Inc., introduces a 7 to 13 GHz GaAs MMIC 6-bit phase shifter with LVCMOS/TTL compatible digital control. Identified as XS1000-BD, this device has digitally controlled 6-bit operation and a least significant bit (LSB) of 5.625°. The XS1000-BD delivers +25 dBm P1dB input compression and is well suited for beamforming, EW receivers, military and weather radar, and SATCOM applications.
LISTED UNDER: Semiconductors, MMICE-PHEMT MMIC Amplifier Combines Low Noise and High IP3
August 3, 2009 11:41 am | Product Releases | CommentsMini-Circuits’ PMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 100 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier appropriate for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.
LISTED UNDER: Semiconductors, MMICHigh Dynamic Range MMIC Amplifier
August 3, 2009 9:13 am | Product Releases | CommentsMini-Circuits PHA-1+ Ultra high dynamic range MMIC amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high Output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.
LISTED UNDER: Semiconductors, MMICFirst Complete, Front-to-Back Solution for MMIC, RF Module Design
June 11, 2009 5:07 am | Product Releases | CommentsAgilent Technologies Inc. introduces its Advanced Design System 2009 Update 1, a complete, front-to-back solution for monolithic microwave integrated circuit (MMIC) and RF module design. The release integrates 3-D electromagnetic (EM) analysis, wireless standards-based design verification libraries, X-parameter simulation, and statistical design and yield optimization....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Antenna Switch Supports Multi-band Transceiver Platforms
May 26, 2009 6:59 am | Product Releases | CommentsNEC's UPG2193T6E Single Pole Eight Throw (SP8T) GaAs MMIC antenna switch was developed specifically to meet the needs of new 3G UMTS, W-CDMA and Quad Band EDGE mobile phone designs. The UPG2193T6E was developed to meet the industry's need to replace the common two-switch solution with a single miniature device.
LISTED UNDER: Semiconductors, MMICGaAs MMIC Power Amp Delivers 10 W Output Power
May 26, 2009 6:59 am | Product Releases | CommentsMimix Broadband, Inc. introduces a GaAs MMIC high power amplifier (HPA) with +41 dBm pulsed saturated output power and 17 dB small signal gain. This HPA, identified as XP1057-BD, uses a dual sided bias architecture, covers 13.5 to 16 GHz and achieves +48 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....
LISTED UNDER: Semiconductors, MMICGaAs MMIC Power Amplifier Delivers 5 W Output Power
May 4, 2009 11:28 am | Product Releases | CommentsMimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm saturated output power and 27 dB small signal gain. This HPA, identified as XP1058-BD, uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves +44 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....
LISTED UNDER: Semiconductors, MMICMini MMIC Amplifier Delivers 38 dB Gain
March 31, 2009 7:37 am | Product Releases | CommentsMini MMIC amplifier California Eastern Laboratories announces its Model UPC3236TK NEC medium power silicon amplifier that delivers 38 dB of gain flat from 250 MHz to 2.6 GHz, making it suitable for use as a wideband IF amplifier in DBS LNB down converters. With its high linearity and optimal reverse isolation, this amplifier is also useful as a wideband gain block or as a buffer amplifier following a VCO....
LISTED UNDER: Semiconductors, MMIC34 to 37 GHz GaAs MMIC Power Amplifier Achieves 24% PAE
March 19, 2009 11:55 am | Product Releases | CommentsMimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm pulsed saturated output power and 22 dB large signal gain. This HPA, identified as XP1073-BD, covers 34 to 37 GHz and achieves 24% power added efficiency (PAE). The device is well suited for millimeter-wave military, radar, satellite and weather applications....
LISTED UNDER: Semiconductors, MMICCoupler Functions in GaN MMIC Devices
February 25, 2009 10:46 am | Product Releases | CommentsInnovative Power Products' Model IPP-4011 transforming 90º hybrid coupler combines two signals of up to 300 W CW total output power in GaN MMIC devices with 25 W input and output impedances. The 2.20Ω × 0.80Ω × 0.23Ω drop-in-style-packaged device offers two ports at 50 ? impedance and two ports at 25Ω impedance....
LISTED UNDER: Semiconductors, MMIC
