M/A-COM Technology Solutions' New Single-Channel CMOS Driver

April 26, 2013 8:41 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

M/A-COM Technology Solutions Inc.has introduced a new single-channel CMOS Driver for Microwave Switching Applications. The MADR-009269 is a high-performance, single-channel CMOS Driver that is used to translate TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Maxim's Bits for Tuner for DAB

April 16, 2013 9:33 am | by WDD Staff | Product Releases | Comments

Maxim Integrated Products, Inc. [NASDAQ: MXIM] has announced the MAX2173 RF to Bits tuner for digital audio broadcast (DAB) applications in automobiles and other mobile DAB/FM products. The RF to Bits DAB/FM tuner integrates a radio tuner.

LISTED UNDER: Boards & Modules | Mixers, Microwave / RF / IF | Receivers, RF / Microwave

Smart Remote Control Enables Two-Way Communication

April 11, 2013 11:42 am | by WDD Staff | Product Releases | Comments

The JN5161 from NXP is an ultra-low power, high-performance wireless microcontroller supporting RF4CE or IEEE802.15.4 networking stacks to facilitate the development of remote control or wireless sensor applications. It features 8 kB RAM and 4 kB EEPROM memory.

LISTED UNDER: Power, Microcontrollers | Semiconductors, MMIC | Sensors & Transducers

Cypress’s New $25 PSoC 4 Pioneer Kit

April 10, 2013 11:09 am | by WDD Staff | Product Releases | Comments

Cypress Semiconductor Corp. [NASDAQ: CY] and Premier Farnell (London), have announced that customers can pre-order Cypress’s new PSoC 4 Pioneer Kit. Combined with the free PSoC Creator Integrated Design Environment...

LISTED UNDER: Boards & Modules | Development Kits / Platforms | Semiconductors, Diodes

RFMW Introduces 180-Micron pHEMT FET from TriQuint Semiconductor

April 5, 2013 10:38 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2018, a discrete 180-Micron pHEMT, which operates from DC to 20 GHz. The TGF2018 features TriQuint's standard 0.25 um power pHEMT production process and 55% power-added efficiency @ 1 dB compression.

LISTED UNDER: Semiconductors, MMIC | Semiconductors, SoC | Semiconductors, Transistors

Microchip Extends 8-Bit MCU Family

April 1, 2013 11:52 am | by WDD Staff | Product Releases | Comments

Microchip Technology Inc. (Chandler, AZ) [NASDAQ:  MCHP] has announced a new addition to its PIC12/16F15XX 8-bit microcontroller (MCU) family.  The low pin count PIC12LF1552 is Microchip’s smallest (2 x 3 mm UDFN package) MCU with hardware I2C support.

LISTED UNDER: Power, Microcontrollers | Semiconductors, MMIC

Low Conversion Loss & High Image Rejection

March 22, 2013 9:16 am | by WDD Staff | Product Releases | Comments

Custom MMIC , a developer of performance-driven monolithic microwave integrated circuits (MMICs), is now offering a new passive 6-10 GHz I/Q mixer, the CMD182C4. When paired with an external IF hybrid, the CMD182C4 can be used as either an image...

LISTED UNDER: Semiconductors, MMIC

Transphorm's GaN Silicon Transistors & Diodes

March 20, 2013 11:08 am | by WDD Staff | Product Releases | Comments

Transphorm Inc. has announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing a JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, MMIC | Semiconductors, Transistors

New Gallium Nitride (GaN) RF MMIC Process Technologies to Enable Lower Cost, Higher Performance Telecommunication and Radar Systems

June 18, 2012 5:22 am | Wireless Design & Development | Product Releases | Comments

Higher Power GaN-on-SiC Processes Allow Telecom System Operators and Military System Providers to Leverage GaN Efficiency for Operational Cost Savings. Cree, Inc.announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, and G50V3, a 0.

LISTED UNDER: Semiconductors, MMIC | Telecommunications | Radar

Ka-Band LNA MMIC Offers 1.7 dB Noise Figure and Low-Power Dissipation

April 16, 2012 8:13 am | Product Releases | Comments

Custom MMIC ( ), a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.

LISTED UNDER: Semiconductors, MMIC

RF Amplifier MMICs Designed to Optimize 3G-4G Infrastructure Base Stations

November 16, 2011 6:20 am | Product Releases | Comments

Richardson RFPD today announces off-the-shelf availability for a complete set of key building-block RF amplifiers, each of which has been designed specifically for enhanced performance in demanding applications such as 3G/4G wireless communications systems. The product line is based on advanced semiconductor technologies, including InGaP HBT and Enhanced-Mode GaAs pHEMT (E-pHEMT), providing a superior combination of high dynamic range, low noise figure, and low intermodulation distortion relative to P1dB.

LISTED UNDER: Semiconductors, MMIC

GaN MMIC Power Amplifier Delivers 10W from 10 MHz to 10 GHz

September 12, 2011 6:52 am | Product Releases | Comments

Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new GaN HEMT MMIC Wideband Power Amplifier which is ideal for test & measurement equipment and military EW and ECM applications up to 10 GHz. The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier Chip which operates between 0.

LISTED UNDER: Semiconductors, MMIC

HEMT Transistors and MMIC Enhance S-Band Radar Applications

July 12, 2011 7:18 am | Product Releases | Comments

Cree released a family of packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) with what is presented as the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solutions.

LISTED UNDER: Semiconductors, MMIC | Semiconductors, Transistors | Radar

Multi-function Upconverter MMICs Extend To 24 GHz

June 13, 2011 9:30 am | Product Releases | Comments

Endwave Corporation has added a pair of integrated frequency upconverters to its line of high-performance GaAs monolithic-microwave-integrated-circuit (MMIC) products. The models EWU1509YF and EWU1809YF frequency upconverters operate over intermediate-frequency (IF) ranges of DC to 4 GHz and generate frequencies of 10.

LISTED UNDER: Semiconductors, MMIC

Cree Demonstrates Industry's First C-Band GaN HEMT MMIC High-Power Amplifier for Satellite Communications

June 7, 2011 3:30 pm | Product Releases | Comments

Cree will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications during the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers.

LISTED UNDER: Semiconductors, MMIC


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