Cypress’s New $25 PSoC 4 Pioneer Kit
April 10, 2013 11:09 am | by WDD Staff | Product Releases | CommentsCypress Semiconductor Corp. [NASDAQ: CY] and Premier Farnell (London), have announced that customers can pre-order Cypress’s new PSoC 4 Pioneer Kit. Combined with the free PSoC Creator Integrated Design Environment...
LISTED UNDER: Boards & Modules | Development Kits / Platforms | Semiconductors, DiodesAdvancing Secure Communications
April 10, 2013 9:17 am | by University of Michigan | News | CommentsIn a development that could make the advanced form of secure communications known as quantum cryptography more practical, University of Michigan researchers have demonstrated a simpler, more efficient single-photon emitter that can be made using traditional semiconductor processing techniques.
LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC
RFMW Introduces 180-Micron pHEMT FET from TriQuint Semiconductor
April 5, 2013 10:38 am | by WDD Staff | Product Releases | CommentsRFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2018, a discrete 180-Micron pHEMT, which operates from DC to 20 GHz. The TGF2018 features TriQuint's standard 0.25 um power pHEMT production process and 55% power-added efficiency @ 1 dB compression.
LISTED UNDER: Semiconductors, MMIC | Semiconductors, SoC | Semiconductors, Transistors
Microchip Extends 8-Bit MCU Family
April 1, 2013 11:52 am | by WDD Staff | Product Releases | CommentsMicrochip Technology Inc. (Chandler, AZ) [NASDAQ: MCHP] has announced a new addition to its PIC12/16F15XX 8-bit microcontroller (MCU) family. The low pin count PIC12LF1552 is Microchip’s smallest (2 x 3 mm UDFN package) MCU with hardware I2C support.
LISTED UNDER: Power, Microcontrollers | Semiconductors, MMIC
Low Conversion Loss & High Image Rejection
March 22, 2013 9:16 am | by WDD Staff | Product Releases | CommentsCustom MMIC , a developer of performance-driven monolithic microwave integrated circuits (MMICs), is now offering a new passive 6-10 GHz I/Q mixer, the CMD182C4. When paired with an external IF hybrid, the CMD182C4 can be used as either an image...
LISTED UNDER: Semiconductors, MMIC
Transphorm's GaN Silicon Transistors & Diodes
March 20, 2013 11:08 am | by WDD Staff | Product Releases | CommentsTransphorm Inc. has announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing a JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics...
LISTED UNDER: Semiconductors, Diodes | Semiconductors, MMIC | Semiconductors, TransistorsNew Gallium Nitride (GaN) RF MMIC Process Technologies to Enable Lower Cost, Higher Performance Telecommunication and Radar Systems
June 18, 2012 5:22 am | Product Releases | CommentsHigher Power GaN-on-SiC Processes Allow Telecom System Operators and Military System Providers to Leverage GaN Efficiency for Operational Cost Savings. Cree, Inc.announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, and G50V3, a 0.
LISTED UNDER: Semiconductors, MMIC | Telecommunications | RadarKa-Band LNA MMIC Offers 1.7 dB Noise Figure and Low-Power Dissipation
April 16, 2012 8:13 am | Product Releases | CommentsCustom MMIC ( http://www.custommmic.com/ ), a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.
LISTED UNDER: Semiconductors, MMICRF Amplifier MMICs Designed to Optimize 3G-4G Infrastructure Base Stations
November 16, 2011 6:20 am | Product Releases | CommentsRichardson RFPD today announces off-the-shelf availability for a complete set of key building-block RF amplifiers, each of which has been designed specifically for enhanced performance in demanding applications such as 3G/4G wireless communications systems. The product line is based on advanced semiconductor technologies, including InGaP HBT and Enhanced-Mode GaAs pHEMT (E-pHEMT), providing a superior combination of high dynamic range, low noise figure, and low intermodulation distortion relative to P1dB.
LISTED UNDER: Semiconductors, MMICGaN MMIC Power Amplifier Delivers 10W from 10 MHz to 10 GHz
September 12, 2011 6:52 am | Product Releases | CommentsHittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new GaN HEMT MMIC Wideband Power Amplifier which is ideal for test & measurement equipment and military EW and ECM applications up to 10 GHz. The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier Chip which operates between 0.
LISTED UNDER: Semiconductors, MMICHEMT Transistors and MMIC Enhance S-Band Radar Applications
July 12, 2011 7:18 am | Product Releases | CommentsCree released a family of packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) with what is presented as the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solutions.
LISTED UNDER: Semiconductors, MMIC | Semiconductors, Transistors | RadarMulti-function Upconverter MMICs Extend To 24 GHz
June 13, 2011 9:30 am | Product Releases | CommentsEndwave Corporation has added a pair of integrated frequency upconverters to its line of high-performance GaAs monolithic-microwave-integrated-circuit (MMIC) products. The models EWU1509YF and EWU1809YF frequency upconverters operate over intermediate-frequency (IF) ranges of DC to 4 GHz and generate frequencies of 10.
LISTED UNDER: Semiconductors, MMICCree Demonstrates Industry's First C-Band GaN HEMT MMIC High-Power Amplifier for Satellite Communications
June 7, 2011 3:30 pm | Product Releases | CommentsCree will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications during the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers.
LISTED UNDER: Semiconductors, MMICSub-harmonically Pumped Mixer MMIC Performs Through 97 GHz
April 20, 2011 9:01 am | Product Releases | CommentsEndwave Corporation has announced the release of a new sub-harmonically pumped mixer (2 x LO) MMIC. Designed and manufactured in cooperation with WIN Semiconductor Corporation’s 0.1 µm PHEMT process development, Model EWM9002ZZ offers a broadband frequency performance of 67 to 97 GHz with LO to RF isolation of over 30 dB and a conversion loss of 12 dB....
LISTED UNDER: Semiconductors, MMICBand-Pass MMIC Filters in Compact SMT Packages
April 18, 2011 9:23 am | Product Releases | CommentsHittite Corporation has introduced three new SMT packaged MMIC Band-Pass Tunable Filters which are ideal for pre-selection in multi-band communication systems, wideband radar, and in test and measurement equipment. Tunable over a 4.0 GHz to 19.0 GHz frequency range, these three new, ultra-compact, varactor-tuned, MMIC filters are inherently stable and their small physical size and insensitivity to environmental conditions provide a superior...
LISTED UNDER: Semiconductors, MMIC | Filters, IC
