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New Quad N and P Channel MOSFETS

October 23, 2012 8:00 am | Product Releases | Comments

Advanced Power Electronics Corp. (USA), a l eading manufacturer of MOS power semiconductors for DC-DC power conversion applications, today announced new quad complementary N- and P-channel enhanced-mode MOSFETs that target full bridge applications such as servo and DC motors. Simple to drive and with a low on-resistance, the AP9930GM-HF-3 devices are available in a standard SO-8 package commonly used in surface mount industrial designs.

LISTED UNDER: Semiconductors, FET
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Power MOSFETs Address Emerging Eco-design Standards

September 17, 2012 6:27 am | Product Releases | Comments

A new family of rugged, high-efficiency power products from STMicroelectronics is positioned to enable technology companies to satisfy stricter power and efficiency targets set by eco-design standards and to target green-energy applications such as solar micro-inverters, photovoltaic string inverters and electric vehicles.

LISTED UNDER: Semiconductors, FET

New Super Junction MOSFETs

June 26, 2012 6:09 am | Product Releases | Comments

Renesas Electronics Corporation today announced the availability of three new super-junction metal-oxide-semiconductor field-effect-transistors (Super Junction MOSFETs) featuring figure of merit: on-state resistance x gate change in a 600 V power semiconductor device suitable for high-speed motor drives, DC-DC converters, and DC-AC inverter applications.

LISTED UNDER: Semiconductors, FET

Low-Loss, Miniature Power MOSFETs for Improved Power Efficiency

April 10, 2012 9:59 am | Product Releases | Comments

Renesas Electronics Corporation announced the availability of eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) products optimized for use in portable electronics including smartphones and tablets. Featuring industry-leading low loss (low on-resistance), the new devices include the 20 V (VDSS) µPA2600 and the 30 V µPA2601, equipped in ultracompact 2 mm × 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors.

LISTED UNDER: Semiconductors, FET

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