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Bench Top Amplifier With Front Mounted Input and Output Connectors

August 13, 2012 11:36 am | Wireless Design & Development | Product Releases | Comments

Microsemi’s offers our bench top amplifier for production test or laboratory application. Many of the several thousand low noise or medium power amplifiers detailed on Microsemi’s web site ( www.microsemi.com/rfis ) can be delivered in this optional enclosure. Model AML1826P3203-BT providing 36 dB gain over the 18.

LISTED UNDER: Interconnect, Connectors | Amplifiers, Other
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OPHIR RF Model 5228 Utilizes Class A Ultra Linear Power Devices

August 8, 2012 6:45 am | Wireless Design & Development | Product Releases | Comments

The 5228 is a 1000 Watt broadband amplifier that covers the 80 – 1000 MHz frequency range. This amplifier utilizes Class A Ultra linear power devices that provide an excellent 3rd order intercept point, high gain, and a wide dynamic range. Due to robust engineering and employment of the most advanced devices and components, this amplifier achieves high efficiency operation with proven reliability, Like all OPHIR RF amplifiers, the 5228 comes with an extended multi-year warranty backed by OPHIR RF’s commitment to total customer satisfaction.

LISTED UNDER: Amplifiers, Other

Two Watt Power Amplifiers with On Chip Power Detectors Cover 9 to 14 GHz

July 31, 2012 6:41 am | Wireless Design & Development | Product Releases | Comments

Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced two new, 2 Watt GaAs pHEMT MMIC power amplifiers which cover the 9 to 14 GHz frequency range and are ideal for microwave radio, military and space, SATCOM and test & measurement applications.

LISTED UNDER: Amplifiers, Other

New High Power, High Linearity Power Amplifier Die Products

July 11, 2012 7:09 am | Wireless Design & Development | Product Releases | Comments

Hittite Microwave Corporation has launched three new power amplifier die products which are ideal for microwave and millimeterwave radios, Ka-band VSAT and military & space applications from 27.5 to 46.5 GHz. The HMC1014 is a four stage GaAs pHEMT MMIC Medium Power Amplifier die which operates between 33.

LISTED UNDER: Amplifiers, Other

NXA Series One-Box Phase Noise Analyzers

July 2, 2012 7:34 am | Wireless Design & Development | Product Releases | Comments

Noise eXtended Technologies (Noise XT) introduced the NXA Series, a new family of phase noise analyzers. Noise XT exhibited the new product line for the first time at IMS 2012. The NXA Series simplifies phase noise testing by incorporating a completely new one-box system design. With a category-leading 14-inch touch screen and a redesigned user interface, phase noise measurement is now faster and easier.

LISTED UNDER: Test and Measurement, Analyzers, Spectrum | Amplifiers, Other

Revolutionary Front-end Solution

June 26, 2012 10:09 am | Wireless Design & Development | Product Releases | Comments

Skyworks Solutions, Inc. today announced that it has launched a breakthrough front-end system that integrates all RF and analog content between the transceiver and antenna for simplified design within demanding next generation mobile platforms. Leveraging Skyworks' silicon integration expertise, advanced manufacturing technologies and proprietary techniques, SkyOneT is the world's first semiconductor device to condense multiband power amplifiers and high throw switches along with all associated filtering, duplexing and control functionality into a single, ultra-compact package---all in less than half the area of the industry's most advanced approach.

LISTED UNDER: Amplifiers, Other | Switches, IC

Verilog-A RF Device Models to Accelerate GaN Adoption in 4G/LTE Telecom Infrastructure

June 19, 2012 6:37 am | Wireless Design & Development | Product Releases | Comments

New Models Drive Faster Time to Market and Provide Rapid Simulation of Complex Waveforms such as W-CDMA and OFDMA Cree, Inc. announces the release of a new suite of Verilog-A proprietary non-linear device models for its GaN RF devices, developed for use with leading RF design platforms from Agilent ADS and AWR Microwave Office.

LISTED UNDER: Amplifiers, Other

New Gallium Nitride (GaN) RF MMIC Process Technologies to Enable Lower Cost, Higher Performance Telecommunication and Radar Systems

June 18, 2012 5:22 am | Wireless Design & Development | Product Releases | Comments

Higher Power GaN-on-SiC Processes Allow Telecom System Operators and Military System Providers to Leverage GaN Efficiency for Operational Cost Savings. Cree, Inc.announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, and G50V3, a 0.

LISTED UNDER: Semiconductors, MMIC | Telecommunications | Radar

LNA Offers a Noise Figure of 1.5 dB from 6 to 18 GHz

June 11, 2012 6:13 am | Wireless Design & Development | Product Releases | Comments

Custom MMIC is offering two new devices from its growing MMIC design library. The CMD157 (die) and CMD157P3 (packaged) are GaAs MMIC low-noise amplifiers (LNAs) for applications from 6 to 18 GHz. These broadband devices each boast an impressively low noise figure of 1.5 dB, deliver greater than 25 dB of flat gain, and have a corresponding output 1 dB compression point of +10 dBm.

LISTED UNDER: Amplifiers, Other | Receivers, Other

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