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Richardson RFPD Introduces Two New GaN Power Amplifiers from TriQuint

Mon, 08/11/2014 - 4:54pm
WDD Staff

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Richardson RFPD (LaFox, IL) has announced the availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on Sic) from TriQuint. The TGA2216-SM is a wideband cascode amplifier that offers exceptional wideband performance and also supports 40V operation. It operates from 0.1 to 3.0 GHz and provides greater than 10W of saturated output power with greater than 13 dB of large signal gain and greater than 40% power-added efficiency. The TGA2237-SM is a wideband distributed amplifier that operates from 0.03 to 2.5 GHz and provides greater than 10W of saturated output power with greater than 13 dB of large signal gain and greater than 50% power-added efficiency. Both new devices are:

  • Available in surface mount, 32-lead, 5x5 mm AIN QFN packages.
  • Fully-matched to 50Ω at both RF ports, allowing for simple system integration.
  • Available in die form: TGA2216 / TGA2237.

For more information, visit www.richardsonrfpd.com.

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