Cree Introduces New Low Cost, High Power GaN RF Transistors
Cree, Inc. (Nasdaq: CREE) (Durham, NC) introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Initial products include the industry's first 300 W plastic packaged transistor operating at 2.7 GHz, delivering Psat efficiency of 65 percent and broadband capability at nearly half the price of the same GaN transistor housed in an industry-standard ceramic package. Scalable to high power levels and capable of operating in all cellular telecom bands up to 3.8 GHz, the new GaN transistors are expected to enable the deployment of smaller, lower-cost macrocell radio units capable of supporting the growing data demands of today's cellular LTE networks.
- Are available at power levels of 60, 100, 150, 200, and 300 W.
- Operate at frequencies up to 3.8 GHz.
- Are pre-matched to cellular bands at 690 – 960 MHz, 1800 – 2300 MHz, or 2300 – 2700 MHz.
- Demonstrate 80 W average power at 2.6 GHz with 50% drain efficiency under 7.5 dB PAR LTE signals at 50 V.
- Have 17 dB of gain at rated output power.
- Are verified to meet moisture sensitivity level (MSL-3) and JEDEC environmental standards.
For more information visit cree.com.