Transphorm Adds to Its 600 V GaN-on-Silicon Family
Transphorm (Goleta, CA) has announced at APEC 2014 the industry’s first 600 V GaN-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. Transphorm’s 600V GaN HEMTs utilize EZ-GaNTM technology that combines low switching and conduction losses, reducing the overall system energy dissipation up to 50% compared with using conventional silicon-based power conversion designs. The new PQFN products, TPH3002LD and TPH3002LS, are offered in widely-used, low-profile PQFN88 packages and feature:
- 290 mΩ RDS(on), 29 nC Qrr & low inductance for high-frequency switching capability.
- A kelvin connection to better isolate the gate circuit from the high-current output circuit to further reduce EMI.
- Availability with the 600V TO 220 GaN HEMT devices in configurations for LLC DC-DC converter, totem-pole PFC, & all-in-one power supply.
For more information, visit www.transphormusa.com.