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GaN on SiC Low Noise Amplifiers from TriQuint

Fri, 05/02/2014 - 8:42am
WDD Staff

LISTED UNDER:

Richardson RFPD (LaFox, IL) has announced immediate availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on SiC) low noise amplifiers (LNAs) from TriQuint. The TGA2611 and TGA2612 are broadband LNAs fabricated on TriQuint's production 0.25μm GaN on SiC process (TQGaN25). Features include:

  • Frequency ranges of 2-6 & 6-12 GHz.
  • Low noise figures of 1.5 & <1.8.
  • High gains of 25 & >22 dB.
  • Input power handling of 33 dBm.

For more information, visit:

www.richardsonrfpd.com.

www.triquint.com.

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