RFMW Offers 285 W GaN Transistors from TriQuint
RFMW (San Jose, CA) has announced design and sales support for TriQuint’s T1G2028536, a 285W GaN transistor available in a low thermal resistance, solder mount package as the T1G2028536–FS or flange mount package as the T1G2028536–FL. Both the –FS and -FL house the transistor in a ceramic NI-780 enclosure. Applicable to commercial and military radar, both T1G2028536–FS and T1G2028536–FL are input prematched for L-band operation. Additional applications include professional and military communications, wideband amplifiers and avionics. Features include:
- Operation from DC to 2GHz.
- Provides 18dB of linear gain at 1.2GHz.
- Operates from a 36V source drawing 576mA.
- Efficiency ratings up to 65% in optimized circuits
For more information, visit www.rfmw.com