Richardson RFPD Introduces 48V GaN-on-Si RF Power Transistors
Richardson RFPD (LaFox, IL) announced that it is taking advance orders and offering full design support capabilities for a new family of 48V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex. Features include:
- Operation up to 4000 MHz.
- Designed for continuous wave (CW), pulsed, and linear operation.
- High gain, power and efficiency, as well as decreased thermal resistance.
For more information, visit www.richardsonrfpd.com