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Richardson RFPD Introduces 48V GaN-on-Si RF Power Transistors

Thu, 12/19/2013 - 1:32pm
WDD Staff

Richardson RFPD (LaFox, IL) announced that it is taking advance orders and offering full design support capabilities for a new family of 48V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex. Features include:

  • Operation up to 4000 MHz.
  • Designed for continuous wave (CW), pulsed, and linear operation.
  • High gain, power and efficiency, as well as decreased thermal resistance.

For more information, visit www.richardsonrfpd.com

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