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Richardson RFPD’s 50 V Moisture-Resistant DMOS Transistor

Mon, 12/09/2013 - 5:23pm
WDD Staff

Richardson RFPD (LaFox, IL) announced immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST). The SD4933MR is an N-channel field-effect RF power transistor intended for use in 50V industrial, scientific and medical (ISM) applications up to 100 MHz. The device benefits from the latest generation of environmentally-designed packaging and is ruggedized against cyclic high-moisture operating and severe storage conditions. Features include:

  • POUT = 300 W minimum with 24 dB gain @ 30 MHz.
  • Moisture-resistant package for extreme environments.
  • Improved ruggedness V(BR)DSS > 200V.
  • 20:1 all phases load mismatch capability under CW conditions.
  • Same footprint as SD4933.
  • Excellent thermal stability.
  • 200 °C maximum junction temperature.
  • Passes THB 85/85 reliability test.

For more information, visit www.richardsonrfpd.com

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