Advertisement
Product Releases
Advertisement

Ultra-small P-channel Enhancement-Mode Power MOSFETs

Wed, 10/02/2013 - 11:04am
WDD Staff

Advanced Power Electronics (San Jose, CA) has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

Features of the AP2325GEU6-HF-3:

  • Fast switching.
  • Low on-resistance.
  • Cost-effective.
  • Simple to use.
  • Low gate charge.
  • Minimum Drain-Source Breakdown Voltage (BVDSS) of -20 V.
  • Maximum RDS(ON) of 145 m Ω.
  • Maximum Continuous Drain Current (ID) at 25° C of -1.8 A.

For more information visit www.a-powerusa.com

Topics

Advertisement

Share this Story

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading