Advanced Power Electronics (San Jose, CA) has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.
Features of the AP2325GEU6-HF-3:
- Fast switching.
- Low on-resistance.
- Simple to use.
- Low gate charge.
- Minimum Drain-Source Breakdown Voltage (BVDSS) of -20 V.
- Maximum RDS(ON) of 145 m Ω.
- Maximum Continuous Drain Current (ID) at 25° C of -1.8 A.
For more information visit www.a-powerusa.com