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TriQuint’s New GaN Solutions

Thu, 10/17/2013 - 1:16pm
WDD Staff

TriQuint Semiconductor (Hillsboro, OR) announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs. TriQuint’s two new high-power GaN packaged transistors include the 200 Watt T1G4020036-FS/FL and the 285 Watt T1G2028536-FS/FL. Features include:

  • Excellent gain enables smaller RF amplifiers and reduced part-counts in many applications.
  • Widely exportable.
  • T1G2028536-FS/FL covers DC-2 GHz.
  • T1G4020036-FS/FL covers DC-3.3 GHz.

For more information, visit www.triquint.com.

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