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New 28 V GaN-on-Si RF Power Amplifier from Nitronex

Tue, 10/29/2013 - 12:32pm
WDD Staff

Richardson RFPD (LaFox, IL) has announced a new 28 V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex (Morrisville, NC). The NPA1006 is a wideband GaN power amplifier optimized for 20 to 1,000 MHz operation. This device has been designed for saturated and linear operation with output power levels to 15 W (41.8 dBm). Additional features include:

  • An industry-standard surface mount DFN6X5-8 plastic package.
  • An input matched to 50 Ω.
  • A high drain efficiency of >50%.

For more information visit http://www.richardsonrfpd.com and http://www.nitronex.com.

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