RFMW Supports 120W GaN Transistors from TriQuint Semiconductor
RFMW (San Jose, CA) has announced design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration. The RF inputs of the T1G4012036-FL and T1G4012036-FS are pre-matched for S-Band operation. Applications for the T1G4012036 include wideband or narrowband amplifiers, civilian and military radar, communication systems and jammers. Features include:
- Low thermal resistance.
- Operation from DC to 3.5 GHz.
- > 50% drain efficiency from a 36 V supply.
- Linear gain is as high as 15 dB.
For more information, visit www.rfmw.com.