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MACOM’s New 600 W GaN on SiC Pulsed Power Transistor

Wed, 09/25/2013 - 3:31pm
WDD Staff

MACOM (Lowell, MA) recently announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications. The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. The MAGX-001090-600L00 features:

  • 600 W of output power.
  • 21.4 dB of gain and 63% efficiency.
  • Very low thermal resistance of 0.05 0C/W.
  • Load mismatch tolerance of 5:1.
  • Pulse droop of 0.2 dB.
  • Can be used effectively under demanding Mode-S ELM operating conditions. 

MACOM’s GaN transistor technology has been fully qualified with accelerated, high-temperature lifetime tests and this device has a predicted MTTF of over 600 years at a maximum junction temperature of 200°C. The device also boasts very high breakdown voltages, which provides customers with reliable and stable operation even in extreme load mismatch conditions.

For more information, please visit www.macomtech.com

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