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RFMW Introduces Discrete 1600-Micron FET from TriQuint Semiconductor

Wed, 07/17/2013 - 3:15pm
WDD Staff

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RFMW (San Jose, CA) has announced design and sales support for a discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. Features include:

  • 63% PAE at 8V and 517mA Idss.
  • Silicon nitride, protective overcoat layer, providing environmental robustness and scratch protection.
  • 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach.

For more information, visit www.rfmw.com.

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