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Rugged LDMOS Ups the Power

Wed, 06/05/2013 - 9:43am
WDD Staff

NXP Semiconductors N.V. (Seattle, WA) has introduced the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions, capable of withstanding a severe load mismatch with VSWR greater than 65:1 at 5 dB of compression. The BLF188XR is capable of providing an outstanding 1600 W of peak output power and can operate as high as 60 V, and still pass extreme ruggedness testing. Features include:

  • Stronger integrated ESD protection allowing the BLF188XR to be used in a Class C mode of operation.
  • Easy to design and tune in multiple applications.
  • Ideal for high-power linear applications.
  • For large-scale industrial, scientific and medical applications in frequency ranges under 300 MHz.
  • Recommended for frequency ranges up to 500 MHz.

For more information, visit: www.nxp.com.

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