RFMW Introduces 800-Micron Discrete FET
RFMW (San Jose, CA) has announced design and sales support for a discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2080 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required. Features include:
- 29.5dBm P1dB with 11.5dB associated gain and power added efficiency of 56%.
- Silicon nitride, protective overcoat layer provides environmental robustness and scratch protection.
- High-efficiency pHEMT power, providing a broad selection of output powers.
For more information, visit: www.rfmw.com.