RFMW Introduces 1200-Micron Discrete FET from TriQuint Semiconductor
RFMW (San Jose, CA) has announced design and sales support for TriQuint Semiconductor’s TGF2120, a discrete 1200-Micron GaAs pHEMT FET. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2120 is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. The TGF2120 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers. Features include:
- 0.25um pHEMT design optimizes power and efficiency at high drain bias operating conditions.
- 31dBm P1dB with 11dB associated gain.
- Power added efficiency (PAE) of 57%.
- Silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection.
For more information, visit www.rfmw.com.