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Peregrine’s UltraCMOS Technology Enables High-Power LTE Radios

Tue, 06/11/2013 - 3:45pm
WDD Staff

Peregrine Semiconductor (San Diego, CA) announced from booth #1811 at the International Microwave Symposium in Seattle two new SP5T RF switches that enable the next generation of high-power LTE public safety and military radios. The combination of Peregrine’s UltraCMOS and HaRP technologies allow the new PE42850 and PE42851 switches to achieve 17W of power handling, with high linearity. Peregrine’s innovative HaRP technology enables excellent 2fo/3fo harmonic performance of -90 dBc into a 1.15:1 VSWR in the PE42850, and -80 dBc into a 1.15:1 VSWR in the PE42851. These features, along with a high throw count, make the PE42850 and PE42851 switches ideal for transmission/receive and filter-band switching applications in Land Mobile Radios (LMRs). Features include:

  • Low insertion loss of (RFC-RFx) 0.25 dB typ. @ 520 MHz reduces RF signal attenuation, resulting in less heat dissipation and improved performance.
  • Low power consumption of 130 microamperes typical, which helps to extend battery life.
  • High ESD performance of 1.5 kV HBM eases manufacturing and results in longer product life.

For more information, visit: www.psemi.com.

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