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M/A-COM Technology Solutions’ New GaN on SiC HEMT Transistor

Thu, 05/09/2013 - 9:19am
WDD Staff

M/A-COM Technology Solutions Inc. (M/A-COM) (Lowell, MA) has introduced a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications. The MAGX-001214-500L00 features:

  • A 500 W output power.
  • 19 dB of gain and 55% efficiency. 
  • A power of 50 V.
  • A frequency range from 1,200 to 1,400 MHz.

For more information visit www.macomtech.com.

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