RFMW Introduces 180-Micron pHEMT FET from TriQuint Semiconductor
Fri, 04/05/2013 - 10:38am
RFMW, Ltd. (San Jose, CA) announces design and sales support for TriQuint Semiconductor’s TGF2018, a discrete 180-Micron pHEMT, which operates from DC to 20 GHz. The TGF2018 features:
- TriQuint's standard 0.25 um power pHEMT production process.
- 22 dBm of output power @ P1 dB.
- A gain of 14 dB.
- 55% power-added efficiency @ 1 dB compression.
- A protective overcoat layer of silicon nitride that provides a level of environmental robustness and scratch protection.