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RFMW Introduces 180-Micron pHEMT FET from TriQuint Semiconductor

Fri, 04/05/2013 - 10:38am
WDD Staff

RFMW, Ltd. (San Jose, CA) announces design and sales support for TriQuint Semiconductor’s TGF2018, a discrete 180-Micron pHEMT, which operates from DC to 20 GHz. The TGF2018 features:

  • TriQuint's standard 0.25 um power pHEMT production process.
  • 22 dBm of output power @ P1 dB.
  • A gain of 14 dB.
  • 55% power-added efficiency @ 1 dB compression.
  • A protective overcoat layer of silicon nitride that provides a level of environmental robustness and scratch protection.

For more information email info@rfmw.com or visit www.rfmw.com.

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