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Silicon Carbide High-frequency Power Module Rated at 100A Current Handling and 1200V Blocking

Wed, 11/21/2012 - 4:24am

Cree continues to showcase the superior performance and reliability of its silicon carbide (SiC) power technology with the introduction of the first commercially available all-SiC Cree power module.  The new high frequency module, rated at 100A current handling and 1200V blocking, allows higher efficiency, compact and lighter weight systems that can result in lower total system costs compared to conventional silicon-based technologies.

“An all-SiC module with these specifications enables us to meet our transit customers’ demands for reduced size and weight of auxiliary power converters, while meeting efficiency and cost targets,” said Fisal Al-Kayal, innovation and research engineer, Alstom Belgium Transport.

The module includes SiC MOSFETs and SiC Schottky diodes in a 50mm half-bridge configuration rated to 150°C maximum junction temperature.  The SiC components enable the module to be operated at exceptionally high switching frequencies that can reduce the size, weight and cost of the power conversion system. The new power module has demonstrated up to 100 kHz switching frequency. Target applications include high power converters, industrial motor drives, solar inverters and uninterruptible power supplies.  

Parts are available for immediate shipping through Digi-Key Corporation and Mouser Electronics (CAS100H12AM1). Sample gate drivers are available upon request to Cree for module customers. For further information about the new all-SiC Cree power module, please visit www.cree.com/sic-modules. Visitors to Electronica 2012 Conference, November 13 – 16, can learn more about the new dual module at Hall A5, Booth 343.

For additional product and company information, please refer to www.cree.com.

 

 

November 21, 2012

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