RFMW Introduces 35W GaN Transistor from TriQuint Semiconductor
RFMW announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC – 3.5GHz GaN transistor offering up to 37W P3dB. Gain at P3dB is >13 dB requiring half the power from a driver stage compared to some competitors. Linear gain is >16dB.
The T1G4003532-FL uses a 32 V supply and only 150 mA of current. Overall efficiency is >53%. The FL flange package offers low thermal resistance and is easily bolted down.
Also available is an earless package in the T1G4003532-FS. Both transistors are ideal for military and civilian radar, jammers, and communications systems where high gain and high efficiency are required.