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RFMW Introduces 35W GaN Transistor from TriQuint Semiconductor

Thu, 11/08/2012 - 8:04am

RFMW announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC – 3.5GHz GaN transistor offering up to 37W P3dB. Gain at P3dB is >13 dB requiring half the power from a driver stage compared to some competitors. Linear gain is >16dB.

The T1G4003532-FL uses a 32 V supply and only 150 mA of current. Overall efficiency is >53%. The FL flange package offers low thermal resistance and is easily bolted down.

Also available is an earless package in the T1G4003532-FS. Both transistors are ideal for military and civilian radar, jammers, and communications systems where high gain and high efficiency are required.

For more information, visit: http://www.rfmw.com/ProductDetail/T1G4003532FL-TriQuint-Semiconductor-Inc/460141/ and http://www.rfmw.com/ProductDetail/T1G4003532FS-TriQuint-Semiconductor-Inc/460140/.

 

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