GaN Transistor Offers 30W P3dB at 6GHz
RFMW announces design and sales support for TriQuint Semiconductor’s T1G6003028-FL, DC – 6GHz GaN transistor offering 30W P3dB at 6GHz and up to 40W P3dB midband. Gain at P3dB is >11dB requiring half the power from a driver stage compared to some competitors. Linear gain is >14dB. The T1G6003028-FL uses a 28V supply and only 200mA of current. Overall efficiency is up to 60%. The –FL flange package offers low thermal resistance and is easily bolted down. Also available is an earless package in the T1G6003028-FS. Both transistors are ideal for military and civilian radar, jammers and communications systems where high gain and high efficiency are required. The T1G6003028-FS is available from stock at RFMW, Ltd.
T1G6003028-FL: Flanged Package, 30W, 28V, DC-6GHz GaN RF Power Transistor
T1G6003028-FS: Earless Package, 30W, 28V, DC-6GHz GaN RF Power Transistor
November 20, 2012