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RAD-Hard™ Dual Power MOSFETs for Space Applications

Tue, 03/29/2011 - 10:22am
International Rectifier, IR® introduced the company’s first family of radiation hardened (RAD-Hard™) dual power MOSFETs in a compact hermetic LCC-6 surface mount package for low power lightweight space applications requiring a small footprint such as satellite payload power systems.

Offering dimensions as compact as 0.245 inches x 0.17 inches with a low profile of 0.08 inches (6.2 mm long x 4.3 mm wide x 2 mm high), the LCC-6 family of devices helps reduce both board space and weight. The new 60 V logic level devices are available in 2 N-channel, 2 P-channel or 1N and 1P-channel configuration co-packaged in a 6-pad LCC-6 surface mount package.

The devices use IR’s proven R7™ logic level, RAD-Hard MOSFET technology which features low on-state resistance (RDS(on)), fast switching and small size, making the new MOSFETs ideal alternatives to traditional bipolar devices.

The MOSFETs are rated at 100 krad (Si) total ionizing dose (TID) with 300 krad (Si) TID rating also available. Devices are single event effect (SEE) rated at 85 MeV/(mg/cm2) LET and are available as commercial-off-the-shelf (COTS) or screened to MIL-PRF-19500 space level.

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