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Breakthrough LDMOS Power from Richardson Electronics

Mon, 12/13/2010 - 9:12am
Richardson Electronics announces that Freescale Semiconductor has introduced the first 50V LDMOS power transistor that can deliver its full rated output power of 1.25kW after withstanding a load mismatch VSWR of 65:1 ? across ALL phase angles. This extreme ruggedness capability represents a major advancement over the current RF power transistor choices for designers of defense/aerospace amplifiers, CO2 laser exciters, plasma generators, magnetic resonance imaging (MRI) RF amplifier systems, particle accelerator amplifiers, FM and DVB-T broadcast amplifiers, and a wide variety of HF/VHF communications equipment linear amplifiers over the frequency range from 1.8 to 600 MHz.

Additional important features of the MRFE6VP61K25H/HS include:

* Device can be used single-ended or in a Push-Pull configuration

* Robust 24dB gain allows for fewer stages in many amplifier designs

* Low Thermal Resistance

* Characterized from 30V to 50V supply voltage

* Capable of 1250 Watts CW or Pulse operation

* Available in both bolt-down and solder-down ceramic packaging.

A quick demonstration video is available (Lab Demo - High Rugged Test) regarding the enhanced ruggedness at 65:1 load VSWR (all phase angles) for this family of LDMOS high-powered transistors from Freescale Semiconductor.

Reference designs for the MRFE6VP61K25, datasheets, and the product itself are available from Richardson Electronics, 1-800-737-6937 (North America); or find your local sales engineer worldwide at www.rell.com/RFPD

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