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PQFN Power MOSFETs Deliver High Density Solution for Industrial Point-Of-Load Applications

Tue, 11/16/2010 - 6:00am
International Rectifier, IR® announces the introduction of a family of 25 V and 30 V devices featuring IR’s latest HEXFET® MOSFET silicon in a new performance PQFN 3 x 3 package that delivers a high density, reliable and efficient solution for DC-DC converters in telecom, netcom, and high-end desktop and notebook computer applications.

     As a result of improved manufacturing technology, IR’s new performance PQFN 3 x 3 package enables up to 60 percent higher load current capability than standard PQFN 3 x 3 devices in the new compact footprint while overall package resistance is significantly reduced to deliver extremely low on-state resistance (RDS(on)). In addition to the low RDS(on), the new performance PQFN package offers enhanced thermal conductivity as well as improved reliability and is qualified to industrial standard and moisture sensitivity level 1 (MSL1).

The performance PQFN package technology is also applied to 5 mm x 6 mm footprint devices enabling designs requiring more current without the need for additional footprint compared to standard PQFN 5 x 6 devices.

The family includes devices optimized for use as control MOSFETs featuring low gate resistance (Rg) to reduce switching losses. For synchronous MOSFET use, devices are available as a FETKY® (monolithic FET and Schottky diode) configuration to offer enhanced efficiency and EMI performance by reducing reverse recovery time.

With a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.

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