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LDMOS Power Transistors Deliver Higher Gain, Greater Efficiency in Mismatched Applications

Tue, 11/16/2010 - 6:00am
Freescale Semiconductor recently unveiled three advanced industrial RF power transistors at an ideal price/performance ratio for original equipment manufacturers (OEMs). The enhanced rugged capability combined with leading-edge RF performance enables OEMs to realize significant cost savings at the system level for industrial and commercial aerospace designs.

Freescale’s MRFE6VP5600H/S and MRFE6VP61K25H/S 50V LDMOS power transistors offer enhanced ruggedness to support harsh environments in highly mismatched applications such as plasma generators, CO2 lasers and MRI power amplifiers. The MRF8P29300H/S 30V LDMOS power transistor is designed for pulsed S-Band applications such as air traffic control (ATC) and also can support modulated communications applications.

Building on Freescale’s industry-leading 50V LDMOS transistor for high mismatched applications, the MRFE6VP5600H/S and MRFE6VP61K25H/S 50V LDMOS transistors deliver output power levels of 600W and 1250W for rugged applications and are capable of handling a Voltage Standing Wave Ratio (VSWR) of 65:1 at multiple phase angles. The enhanced ruggedness allows designers to remove external circuitry that was previously required, which enables lower overall system cost while improving performance.

With the addition of the MRF8P29300H/S, Freescale’s LDMOS power transistors for ATC and modulated communications applications cover frequencies from 10 to 3500 MHz at power levels from 10W to 1000W peak RF power. Ideal for air traffic management systems and weather radar, the MRF8P29300H/S provides a 2700 to 2900 MHz frequency range with pulsed RF output power of 320W. The device has power gain of 13.3 dB and drain efficiency of 50.5 percent, allowing designers to reduce system complexity and costs.

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