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Low Cost Field Effect Transistor (FET) Enables K-Band Designs

Fri, 07/16/2010 - 10:03am
California Eastern Laboratories (CEL) is now shipping its NE3517S03 GaAs Field Effect Transistor (FET). The new FET has been redesigned with an ultra low-cost plastic package, driving down costs to enable even the lowest cost product designs. Its new plastic package does not reduce performance, which remains the same as the prior generation’s ceramic package.

The new NE3517 is an N-Channel GaAs hetero junction FET used primarily as a super low noise amplifier (LNA). Its primary application is cost sensitive product designs in the K-Band at 20 GHz, including LNBs for satellite TV receivers. Though redesigned for low cost, the new FET maintains high performance with strong noise figure (NF) and associated gain (Ga) parameters, critical for applications that use LNAs to extend wireless range.

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